Related papers: Highly Quantum-Confined InAs Nanoscale Membranes
Suspending devices on thin SiN membranes can limit their interaction with the bulk substrate and reduce parasitic capacitance to ground. While suspending devices on membranes is used in many fields including radiation detection using…
All quantum optomechanics experiments to date operate at cryogenic temperatures, imposing severe technical challenges and fundamental constraints. Here we present a novel design of on-chip mechanical resonators which exhibit fundamental…
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing and large ON-state current ($I_{\rm{ON}}$). However, at…
Due to a strong spin-orbit interaction and a large Land\'e g-factor, InSb plays an important role in research on Majorana fermions. To further explore novel properties of Majorana fermions, hybrid devices based on quantum wells are…
Measurement has a special role in quantum theory: by collapsing the wavefunction it can enable phenomena such as teleportation and thereby alter the "arrow of time" that constrains unitary evolution. When integrated in many-body dynamics,…
Scalable interferometers lie at the heart of photonic quantum technologies, but their expansion has been fundamentally limited by optical losses that grow with circuit depth. Here, we introduce and experimentally demonstrate a…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…
Single self-assembled InAs/GaAs quantum dots are a promising solid-state quantum technology, with which vacuum Rabi splitting, single-photon-level nonlinearities, and bright, pure, and indistinguishable single-photon generation having been…
We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs. To clarify the impacts of nanofabrication on the emission…
Traditionally, the understanding of quantum transport, coherent and ballistic1, relies on the measurement of macroscopic properties such as the conductance. While powerful when coupled to statistical theories, this approach cannot provide a…
In-plane semiconductor nanowires with complex branched geometries, prepared via selective area growth (SAG), offer a versatile platform for advanced electronics, optoelectronics, and quantum devices. However, defects and disorder at the…
Small solid state qubits, most prominently single spins in solids, can be remarkable sensors for various physical quantities ranging from magnetic fields to temperature. They package the performance of their bulk semiconductor counterparts…
We present a simple derivation of the density of states (DOS) in confined nanomaterials. While previous studies often apply a heuristic $L^{3-d}$ confinement factor to bulk DOS expressions, we show that this factor arises naturally from a…
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that…
We present measurements of Shubnikov-de Haas oscillations in arrays of bismuth nanowires with diameters comparable to the Fermi wavelength. For 80-nm wires the hole concentration is less than 30% of that for bulk Bi, consistent with current…
High-stress Si$_3$N$_4$ nanoresonators have become an attractive choice for electro- and optomechanical devices. Membrane resonators can achieve quality factor ($Q$) - frequency ($f$) products exceeding $10^{13}$ Hz, enabling (in principle)…
Protected surface states arising from non-trivial bandstructure topology in semimetals can potentially enable new device functionalities in compute, memory, interconnect, sensing, and communication. This necessitates a fundamental…
Subband occupancy (i.e. the number of occupied subbands or energy levels in the semiconductor) is a key physical parameter characterizing the topological properties of superconductor-semiconductor hybrid systems in the context of the search…
Recent advances in bottom-up growth are giving rise to a range of new two-dimensional nanostructures. Hall effect measurements play an important role in their electrical characterization. However, size constraints can lead to device…