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Two Dimensional (2D) Transition Metal Dichalcogenides (TMDs) possess a large direct band gap which has been experimentally observed to shrink with increasing charge carrier density (doping). The effect has been the subject of theoretical…

Mesoscale and Nanoscale Physics · Physics 2025-01-16 Jack N. Engdahl , Harley D. Scammell , Dmitry K. Efimkin , Oleg P. Sushkov

In this work, we employ hybrid and generalized gradient approximation (GGA) level density functional theory (DFT) calculations to investigate the convergence of surface properties and band structure of rutile titania (TiO$_2$) nanoparticles…

Materials Science · Physics 2023-07-10 Sushree Jagriti Sahoo , Xin Jing , Phanish Suryanarayana , Andrew J. Medford

The electronic structure and chemical bonding of wurtzite-GaN investigated by N 1s soft x-ray absorption spectroscopy and N K, Ga M1, and Ga M2,3 emission spectroscopy is compared to that of pure Ga. The measurements are interpreted by…

Materials Science · Physics 2011-12-30 Martin Magnuson , Maurizio Mattesini , Carina Höglund , Jens Birch , Lars Hultman

The band gap is an important parameter of semiconductor materials that influences several functional properties, in particular optical properties. However, a fast and reliable first-principles prediction of band gaps remains a challenging…

Improving electronic structure calculations for practical and technologically-important materials has been a never-ending pursue. This is especially true for transition and post-transition metal oxides for which the current first-principles…

Materials Science · Physics 2019-10-23 Hengxin Tan , Haitao Liu , Yuanchang Li , Wenhui Duan , Shengbai Zhang

First-principles Hubbard-corrected approximate density-functional theory (DFT+U) is a low-cost, potentially high throughput method of simulating materials, but it has been hampered by empiricism and inconsistent band-gap correction in…

Materials Science · Physics 2025-06-16 Daniel S. Lambert , David D. O'Regan

Nonmonotonic bending-induced changes of fundamental band gaps and quasiparticle energies are observed for realistic nanoscale phosphorene nanosheets. Calculations using stochastic many-body perturbation theory (sGW) show that even slight…

Materials Science · Physics 2019-06-12 Vojtech Vlcek , Eran Rabani , Roi Baer , Daniel Neuhauser

The accuracy of bulk property predictions in density functional theory (DFT) calculations depends on the choice of exchange-correlation functional. While the Perdew-Burke-Ernzerhof (PBE) functional systematically overestimates lattice…

The conductance of bulk metal--insulator--metal junctions is evaluated by the Landauer formula using an \textit{ab initio} electronic structure calculated using a plane-waves basis set within density-functional theory (DFT) and beyond,…

Mesoscale and Nanoscale Physics · Physics 2020-02-12 Alberto Dragoni , Benoît Sklénard , François Triozon , Valerio Olevano

Quantum spin Hall (QSH) insulators have attracted intensive experimental and theoretical studies due to their beneficial applications in spintronic devices. Density functional theory (DFT) meets challenges when describing the electronic…

Materials Science · Physics 2024-06-19 Li Yin , Hong Tang , Adrienn Ruzsinszky

We use a combination of conventional density functional theory (DFT) and post-DFT methods, including the local density approximation plus Hubbard $U$ (LDA+$U$), PBE0, and self-consistent $GW$ to study the electronic properties of…

Materials Science · Physics 2011-08-10 Gaoyang Gou , Joseph W. Bennett , Hiroyuki Takenaka , Andrew M. Rappe

The electronic structure and magnetic properties of the strongly correlated material La$_2$O$_3$Fe$_2$Se$_2$ are studied by using both the density function theory plus $U$ (DFT+$U$) method and the DFT plus Gutzwiller (DFT+G) variational…

Materials Science · Physics 2016-09-07 Guangxi Jin , Yilin Wang , Xi Dai , Xinguo Ren , Lixin He

We report results from an efficient, robust, ab-initio method for self-consistent calculations of electronic and structural properties of Ge. Our non-relativistic calculations employed a generalized gradient approximation (GGA) potential…

Materials Science · Physics 2013-09-13 C. E. Ekuma , M. Jarrell , J. Moreno , G. L. Zhao , D. Bagayoko

Functionals of the meta-generalized gradient approximation (MGGA) are nowadays widely used in chemistry and solid-state physics for the simulation of electronic systems like molecules, solids, or surfaces. Due to their dependency on the…

Materials Science · Physics 2022-05-31 Jan Doumont , Fabien Tran , Peter Blaha

The quasiparticle band structures of nonmagnetic monoxides, MO (M=Mg, Ca, Ti, and V), are calculated by the GW approximation. The band gap and the width of occupied oxygen 2p states in insulating MgO and CaO agree with experimental…

Materials Science · Physics 2009-11-07 Atsushi Yamasaki , Takeo Fujiwara

We study the effect of band gap on the ground-state properties of Dirac electrons in a doped graphene within the random phase approximation at zero temperature. Band gap dependence of the exchange, correlation and ground-state energies and…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 Alireza Qaiumzadeh , Reza Asgari

We present excited states density functional theory (DFT) to calculate band gap for semiconductors and insulators. For the excited states exchange-correlation functional, we use a simple local density approximation (LDA) like functional and…

We report the calculated fundamental band gaps of \emph{wurtzite} ternary alloys Zn$_{1-x}$M$_x$O (M=Mg, Cd) and the band offsets of the ZnO/Zn$_{1-x}$M$_x$O heterojunctions, these II-VI materials are important for electronics and…

Materials Science · Physics 2017-01-26 Haitao Yin , Junli Chen , Yin Wang , Jian Wang , Hong Guo

The band structures and optical properties of monoclinic HfO2 are investigated by the local density approximation (LDA)+U approach. With the on-site Coulomb interaction being introduced to 5d orbitals of Hf atom and 2p orbitals of O atom,…

Materials Science · Physics 2013-11-26 Jinping Li , Jiecai Han , Songhe Meng , Hantao Lu , Takami Tohyama

Transition-metal-based Heusler semiconductors are promising materials for a variety of applications ranging from spintronics to thermoelectricity. Employing the $GW$ approximation within the framework of the FLAPW method, we study the…

Materials Science · Physics 2016-06-01 M. Tas , E. Sasioglu , I. Galanakis , C. Friedrich , S. Blugel
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