English

Understanding the origin of bandgap problem in transition and post-transition metal oxides

Materials Science 2019-10-23 v2 Strongly Correlated Electrons

Abstract

Improving electronic structure calculations for practical and technologically-important materials has been a never-ending pursue. This is especially true for transition and post-transition metal oxides for which the current first-principles approaches still suffer various drawbacks. Here we present a hierarchical-hybrid functional approach built on the use of pseudopotentials. The key is to introduce a discontinuity in the exchange functional between core and valence electrons. It allows for treating the localization errors of sp and d electrons differently, which have been known to be an important source of error for the band gap. Using ZnO as a prototype, we show the approach is successful in simultaneously reproducing the band gap and d-band position. Remarkably, the same approach, without having to change the hybrid mixing parameters from those of Zn, works reasonably well for other binary 3d transition and post-transition metal oxides across board. Our findings point to a new direction of systematically improving the exchange functional in first-principles calculations.

Keywords

Cite

@article{arxiv.1812.11288,
  title  = {Understanding the origin of bandgap problem in transition and post-transition metal oxides},
  author = {Hengxin Tan and Haitao Liu and Yuanchang Li and Wenhui Duan and Shengbai Zhang},
  journal= {arXiv preprint arXiv:1812.11288},
  year   = {2019}
}