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Quantum spin Hall effect is endowed with topologically protected edge modes with gapless Dirac spectrum. Applying a magnetic field locally along the edge leads to a gapped edge spectrum with opposite parity for winding of spin texture for…
Ferroelectric tunnel junctions (FTJs) leverage polarization-dependent tunneling through ultrathin barriers to enable two-terminal, non-volatile memory and logic. Although conceptually appealing, the practical implementation of conventional…
The surface bound electronic states of three-dimensional topological insulators, as well as the edge states in two-dimensional topological insulators, are investigated in the presence of a circularly polarized light. The strong coupling…
The conductivity of a two-dimensional HgTe quantum well with a width $\sim$6.3~nm, close to the transition from ordinary to topological insulating phases, is studied. The Fermi level is supposed to get to the overall energy gap. The…
We investigate the tunneling of quasiparticles through a rectangular potential barrier of finite height and width, in 2d and 3d semimetals with band structures consisting of a quadratic band crossing point. We compute the transmission…
We consider a tunnel junction between two arbitrary non-linear systems in any dimension, which can be different. We show that the tunneling charge can be detected using three alternative methods based on current measurements. Besides being…
In this brief note we repeat an earlier calculation of the Fourier transformed scanning tunneling spectra of the $d$-density wave (DDW) phase using a different band structure, which is more realistic and consistent with the angle resolved…
We measure the frequency dependent capacitance of a gate covering the edge and part of a two-dimensional electron gas in the quantum Hall regime. In applying a positive gate bias, we create a metallic puddle under the gate surrounded by an…
Traditionally quantum tunneling in a static SQUID is studied on the basis of a classical trajectory in imaginary time under a two-dimensional potential barrier. The trajectory connects a potential well and an outer region crossing their…
Tunneling between two parallel, two-dimensional electron gases (2DEGs) in a complex oxide heterostructure containing a large, mobile electron density of ~ 3x10^14 cm^-2 is used to probe the subband structure of the 2DEGs.…
We study the effect of backward scatterings in the tunneling at a point contact between the edges of a second level hierarchical fractional quantum Hall states. A universal scaling dimension of the tunneling conductance is obtained only…
Triple heterojunction (THJ) TFETs have been proposed to resolve the low ON-current challenge of TFETs. However, the design space for THJ-TFETs is limited by fabrication challenges with respect to device dimensions and material interfaces.…
We have fabricated longitudinal nanoconstrictions in the charge-density wave conductor (CDW) NbSe$_{3}$ using a focused ion beam and using a mechanically controlled break-junction technique. Conductance peaks are observed below the…
A vertical transistor based on a double gated, atomically thin heterojunction is theoretically examined. Both p-type and n-type transistor operations can be conveniently achieved by using one of the two gates as the switching gate. The…
The approach applicable for spatially inhomogeneous and time-dependent problems associated with the induced superconductivity in low dimensional electronic systems is developed. This approach is based on the Fano--Anderson model which…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
Ferroelectric domain walls are quasi-2D systems that show great promise for the development of non-volatile memory, memristor technology and electronic components with ultra-small feature size. Electric fields, for example, can change the…
Following our work [Phys. Rev. Lett. 125, 020401 (2020)], we discuss a semiclassical description of one-dimensional quantum tunneling through multibarrier potentials in terms of complex time. We start by defining a complex-extended…
The quantum conductance of the single-electron tunneling (SET) transistor is investigated in this paper by the functional integral approach. The formalism is valid for arbitrary tunnel resistance of the junctions forming the SET transistor…
We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output…