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Topological line defects in graphene represent an ideal way to produce highly controlled structures with reduced dimensionality that can be used in electronic devices. In this work we propose using extended line defects in graphene to…

In order to use graphene for semiconductor applications, such as transistors with high on/off ratios, a band gap must be introduced into this otherwise semimetallic material. A promising method of achieving a band gap is by introducing…

Mesoscale and Nanoscale Physics · Physics 2014-08-18 M. R. Thomsen , S. J. Brun , T. G. Pedersen

We investigate transport in a three-terminal graphene quantum dot. All nine elements of the conductance matrix have been independently measured. In the Coulomb blockade regime accurate measurements of individual conductance resonances…

Mesoscale and Nanoscale Physics · Physics 2012-02-24 A. Jacobsen , P. Simonet , K. Ensslin , T. Ihn

Electric transport of double gated bilayer graphene devices is studied as a function of charge density and bandgap. A top gate electrode can be used to control locally the Fermi level to create a pn junction between the double-gated and…

Mesoscale and Nanoscale Physics · Physics 2012-01-06 Hiroki Shioya , Michihisa Yamamoto , Saverio Russo , Monica F. Craciun , Seigo Tarucha

In the effective mass approximation, electronic property in graphene can be characterized by the relativistic Dirac equation. Within such a continuum model we investigate the electronic transport through graphene waveguides formed by…

Strongly Correlated Electrons · Physics 2015-05-13 Haidong Li , Lin Wang , Zhihuan Lan , Yisong Zheng

In this thesis, I investigate the molecular electronic properties of molecular junctions formed from single molecules. I started my thesis by discusses the main theoretical methods using in this work density functional theory and the green…

Mesoscale and Nanoscale Physics · Physics 2016-10-18 Eman Nader Almutib

We report on the observation of quantum transport and interference in a graphene device that is attached with a pair of split gates to form an electrostatically-defined quantum point contact (QPC). In the low magnetic field regime, the…

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field…

Mesoscale and Nanoscale Physics · Physics 2009-11-25 Max C. Lemme

The formation of graphen-nanotube composites addresses a few basic problems. First, both partners are good donors and acceptors of electrons, which significantly complicates the intermolecular interaction between them leading to a two-well…

Materials Science · Physics 2009-01-26 Elena F. Sheka , Leonid A. Chernozatonskii

The unconventional properties of graphene, with a massless Dirac band dispersion and large coherence properties, have raised a large interest for applications in nanoelectronics. In this work, we emphasize that graphene two dimensional…

Mesoscale and Nanoscale Physics · Physics 2008-08-27 Pierre Darancet , Valerio Olevano , Didier Mayou

We propose that recent transport experiments revealing the existence of an energy gap in graphene nanoribbons may be understood in terms of Coulomb blockade. Electron interactions play a decisive role at the quantum dots which form due to…

Mesoscale and Nanoscale Physics · Physics 2009-11-13 F. Sols , F. Guinea , A. H. Castro Neto

Graphene nanoribbons (GNRs) have attracted a strong interest from researchers worldwide, as they constitute an emerging class of quantum-designed materials. The major challenges towards their exploitation in electronic applications include…

More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in…

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn…

Mesoscale and Nanoscale Physics · Physics 2009-12-11 Xinglan Liu , Jeroen B. Oostinga , Alberto F. Morpurgo , Lieven M. K. Vandersypen

Carbon-based nanostructures have unparalleled electronic properties. At the same time, using an allotrope of carbon as the contacts can yield better device control and reproducibility. In this work, we simulate a single-electron transistor…

Mesoscale and Nanoscale Physics · Physics 2024-09-27 Washington F. dos Santos , Felippe Amorim , Alexandre Reily Rocha

Motivated by recent advances in fabricating graphene nanostructures, we find that an electron can be trapped in Z-shaped graphene nanoconstriction with zigzag edges. The central section of the constriction operates as a single-level quantum…

Mesoscale and Nanoscale Physics · Physics 2010-09-23 Adam Rycerz

In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a…

Mesoscale and Nanoscale Physics · Physics 2011-04-29 Jhon W. Gonzalez , Monica Pacheco , Luis Rosales , Pedro Orellana

Feedback-controlled electric breakdown of graphene in air or vacuum is a well-established way of fabricating tunnel junctions, nanogaps, and quantum dots. We show that the method is equally applicable to encapsulated graphene constrictions…

Mesoscale and Nanoscale Physics · Physics 2021-10-13 E. Pyurbeeva , J. L. Swett , Q. Ye , O. W. Kennedy , J. A. Mol

We demonstrate with a fully quantum-mechanical approach that graphene can function as gate-controllable transistors for pumped spin currents, i.e., a stream of angular momentum induced by the precession of adjacent magnetizations, which…

Mesoscale and Nanoscale Physics · Physics 2010-06-10 F. S. M. Guimarães , A. T. Costa , R. B. Muniz , M. S. Ferreira

An unresolved challenge facing electronics at a few-nm scale is that resistive channels start leaking due to quantum tunneling. This affects the performance of nanoscale transistors, with single-molecule devices displaying particularly low…

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