Related papers: Vacuum Annealed Cu contacts for graphene electroni…
In this study, the contact resistance of various metals to chemical vapour deposited (CVD) monolayer graphene is investigated. Transfer length method (TLM) structures with varying widths and separation between contacts have been fabricated…
Graphene is a very promising material for nanoelectronics applications due to its unique and remarkable electronic and thermal properties. However, when deposited on metallic electrodes the overall thermal conductivity is significantly…
Surface impurities and contamination often seriously degrade the properties of two-dimensional materials such as graphene. To remove contamination, thermal annealing is commonly used. We present a comparative analysis of annealing…
Graphene has been extensively studied for a variety of electronic and optoelectronic applications. The reported contact resistance between metal and graphene, or rather its specific contact resistance (R{_C}), ranges from a few tens of…
We report a systematic study of the contact resistance present at the interface between a metal (Ti) and graphene layers of different, known thickness. By comparing devices fabricated on 11 graphene flakes we demonstrate that the contact…
The exploitation of the excellent intrinsic electronic properties of graphene for device applications is hampered by a large contact resistance between the metal and graphene. The formation of edge contacts rather than top contacts is one…
The performance of graphene-based transistors is often limited by the large electrical resistance across the metal-graphene contact. We report an approach to achieve ultra-low resistance metal contacts to graphene transistors. Through a…
Metal contacts are fundamental building components for graphene based electronic devices and their properties are greatly influenced by interface quality during device fabrication, leading to resistance variation. Here we show that nickel…
We introduce a new scheme to realize suspended, multi-terminal graphene structures that can be current annealed successfully to obtain uniform, very high quality devices. A key aspect is that the bulky metallic contacts are not connected…
We study the ballistic transmission and the contact resistance ($R_c$) of a graphite-graphene contact in a top contact geometry from first principles. We find that the calculated $R_c$'s depend on the amount of graphene-graphite overlap,…
We report on experimental investigation of thermal contact resistance of the noncuring graphene thermal interface materials with the surfaces characterized by different degree of roughness. It is found that the thermal contact resistance…
Metal contacts have been identified to be a key technological bottleneck for the realization of viable graphene electronics. Recently, it was observed that for structures that possess both a top and a bottom gate, the electron-hole…
Thermal conductance of metal contacts on transferred graphene (trG) could be significantly reduced from the intrinsic value of similar contacts on as-grown graphene (grG), due to additional resistance by increased roughness, residues,…
The interaction between graphene and metals represents an important issue for the large-area preparation of graphene, graphene transfer and the contact quality in graphene devices. We demonstrate a simple method for estimating and…
We describe a simple and scalable method for the transfer of CVD graphene for the fabrication of field effect transistors. This is a dry process that uses a modified RCA cleaning step to improve the surface quality. In contrast to…
Copper (Cu) is the electrical conductor of choice in many categories of electrical wiring, with household and building installations being the major market of this metal. This work demonstrates the coating of Cu wires - with diameters…
An interlayer distance modulation in twisted bilayer graphene is reported. This is achieved by an in-situ annealing technique. The transformation of systematic vacuum and hydrogen annealing effects in twisted bilayer CVD graphene on SiO2…
We demonstrate a facile fabrication technique for graphene-based transparent conductive films. Highly flat and uniform graphene films are obtained through the incorporation of an efficient laser annealing technique with one-time drop…
The extremely high carrier mobility and the unique band structure, make graphene very useful for field-effect transistor applications. According to several works, the primary limitation to graphene based transistor performance is not…
A systematic investigation of graphene edge contacts is provided. Intentionally patterning monolayer graphene at the contact region creates well-defined edge contacts that lead to a 67% enhancement in current injection from a gold contact.…