Related papers: High Q electromechanics with InAs nanowire quantum…
Dissipation in the flexural dynamics of doubly clamped nanomechanical bar resonators is investigated using molecular dynamics simulation. The dependence of the quality factor Q on temperature and the size of the resonator is calculated from…
Recent years have seen a rapid reduction in the intrinsic loss of nanomechanical resonators (i.e., chip-scale mechanical oscillators). As a result, these devices become increasingly sensitive to the friction exerted by smallest amounts of…
The impact of uni-axial compressive and tensile strain and diameter on the electronic band structure of indium arsenide (InAs) nanowires (NWs) is investigated using first principles calculations. Effective masses and band gaps are extracted…
We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths…
The electronic properties and nanostructure of InAs nanowires are correlated by creating multiple field effect transistors (FETs) on nanowires grown to have low and high defect density segments. 4.2 K carrier mobilities are ~4X larger in…
Using a laterally-fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the…
The native oxide at the surface of III-V nanowires, such as InAs, can be a major source of charge noise and scattering in nanowire-based electronics, particularly for quantum devices operated at low temperatures. Surface passivation…
Quantum mechanics can strongly influence the noise properties of mesoscopic devices. To probe this effect we have measured the current fluctuations at high-frequency (5-90 GHz) using a superconductor-insulator-superconductor tunnel junction…
We develop a theory of macroscopic resonant tunneling of flux in a double-well potential in the presence of realistic flux noise with significant low-frequency component. The rate of incoherent flux tunneling between the wells exhibits…
We investigate the finite frequency (f.f.) noise properties of edge states in the quantum Hall regime. We consider the measurement scheme of a resonant detector coupled to a quantum point contact in the weak-backscattering limit. A detailed…
We theoretically compare transport properties of Fano-Kondo effect with those of Fano effect. We focus on shot noise characteristics of a triple quantum dot (QD) system in the Fano-Kondo region at zero temperature, and discuss the effect of…
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…
The in-plane motion of an electron on helium can couple to superconducting microwave resonators via electrical dipole coupling, offering a robust and rapid readout scheme. In previous efforts, microwave resonator designs for electrons on…
We analyze the response of a nanomechanical resonator to an external drive when it is also coupled to a single-electron transistor (SET). The interaction between the SET electrons and the mechanical resonator depends on the amplitude of the…
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of…
We have observed asymmetric Fano resonances in the conductance of a single electron transistor resulting from interference between a resonant and a nonresonant path through the system. The resonant component shows all the features typical…
We demonstrate fully tunable single and double quantum dots in a one-dimensional hole system based on undoped Ge/Si core-shell nanowire heterostructures. The local hole density along the nanowire is controlled by applying voltages to five…
We report on a systematic study of the Coulomb blockade effects in nanofabricated narrow constrictions in thin (Ga,Mn)As films. Different low-temperature transport regimes have been observed for decreasing constriction sizes: the ohmic, the…
We study the non-equilibrium regime of the Kondo effect in a quantum dot laterally coupled to a narrow wire. We observe a split Kondo resonance when a finite bias voltage is imposed across the wire. The splitting is attributed to the…
We present a new theoretical approach to describe the quantum behavior of a macroscopic system interacting with an external irradiation field, close to the resonant condition. Here we consider the extremely underdamped regime for a system…