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Topologically trivial insulators can be classified into atomic insulators (AIs) and obstructed atomic insulators (OAIs) depending on whether the Wannier charge centers are localized or not at spatial positions occupied by atoms. An OAI can…
The heteroepitaxy of III-V semiconductors on silicon is a promising approach for making silicon a photonic platform for on-chip optical interconnects and quantum optical applications. Monolithic integration of both material systems is a…
We theoretically propose a one-dimensional electronic nanodevice inspired in recently fabricated semiconductor-superconductor-ferromagnetic insulator (SE-SC-FMI) hybrid heterostructures, and investigate its zero-temperature transport…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
The new generation of two-dimensional (2D) materials has shown a broad range of applications for optical and electronic devices. Understanding the properties of these materials when integrated with the more traditional three-dimensional…
Superconducting topological crystalline insulators (TCI) are predicted to host new topological phases protected by crystalline symmetries, but available materials are insufficiently suitable for surface studies. To induce superconductivity…
With great interest from the quantum computing community, an immense amount of R&D effort has been invested into improving superconducting qubits. The technologies developed for the design and fabrication of these qubits can be directly…
The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to…
Traditional silicon-on-insulator (SOI) platform based on-chip photonic interconnects have limited energy-bandwidth scalability due to the optical non-linearity induced power constraints of the constituent photonic devices. In this paper, we…
Implementing superconductors capable of proximity-inducing a large energy-gap in semiconductors in the presence of strong magnetic fields is a major goal towards applications of semiconductor/superconductor hybrid materials in future…
Research on two-dimensional (2D) topological insulators (TIs) is obstructed due to the lack of feasible approaches to growing 2D TIs in experiments. Through systematic first-principles calculations and tight-binding simulations, we propose…
Ulta-wide bandgap semiconductors based on $\beta$-Ga$_2$O$_3$ offer the potential to achieve higher power switching performance, efficiency, and lower manufacturing cost than today's wide bandgap power semiconductors. However, the most…
Axion insulators possess a quantized axion field $\theta=\pi$ protected by combined lattice and time-reversal symmetry, holding great potential for device applications in layertronics and quantum computing. Here, we propose a high-spin…
Optical I/O technologies have emerged as a potential industrial solution for high-performance data interconnection in AI/ML computing acceleration. While optical I/Os are deployed at the edge of computational chips by co-packaged optics…
Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high…
Superconductor digital electronics using Josephson junctions as ultrafast switches and magnetic-flux encoding of information was proposed over 30 years ago as a sub-terahertz clock frequency alternative to semiconductor electronics based on…
Amorphous oxide semiconductors are gaining interest for logic and memory transistors compatible with low-temperature fabrication. However, their low thermal conductivity and heterogeneous interfaces suggest that their performance may be…
We present a method to fabricate tensile-strained germanium-on-insulator (GOI) substrates using heteroepitaxy and layer transfer techniques. The motivation is to obtain a high-quality wafer-scale GOI platform suitable for silicon-compatible…
Advancing complementary metal-oxide-semiconductor (CMOS) technology into the sub-1-nm angstr\"om-scale technology nodes is expected to involve alternative semiconductor channel materials, as silicon transistors encounter severe performance…
A promising pathway towards scalable quantum photonic processors involves the simultaneous integration of deterministic single-photon sources, low-loss photonic circuitry, and fast reconfigurability. Thin-film lithium tantalate on insulator…