Topologically trivial insulators can be classified into atomic insulators (AIs) and obstructed atomic insulators (OAIs) depending on whether the Wannier charge centers are localized or not at spatial positions occupied by atoms. An OAI can possess unusual properties such as surface states along certain crystalline surfaces, which advantageously appear in materials with much larger bulk energy gap than topological insulators, making them more attractive for potential applications. In this work, we show that a well-known crystal, silicon (Si) is a model OAI, which naturally explains some of Si's unusual properties such as its famous (111) surface states. On this surface, using angle resolved photoemission spectroscopy (ARPES), we reveal sharp quasi-1D massive Dirac line dispersions; we also observe, using scanning tunneling microscopy/spectroscopy (STM/STS), topological solitons at the interface of the two atomic chains. Remarkably, we show that the different chain domains can be reversibly switched at the nanometer scale, suggesting the application potential in ultra-high density storage devices.
@article{arxiv.2406.08114,
title = {Massive 1D Dirac Line, Solitons and Reversible Manipulation on the Surface of a Prototype Obstructed Atomic Insulator, Silicon},
author = {Zhongkai Liu and Peng Deng and Yuanfeng Xu and Haifeng Yang and Ding Pei and Cheng Chen and Shanmei He and Defa Liu and Sung-Kwan Mo and Timur Kim and Cephise Cacho and Hong Yao and Zhi-Da Song and Xi Chen and Zhong Wang and Binghai Yan and Lexian Yang and Bogdan A. Bernevig and Yulin Chen},
journal= {arXiv preprint arXiv:2406.08114},
year = {2024}
}