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Hybrid semiconductor-superconductor InAs-Al nanowires with uniform and defect-free crystal interfaces are one of the most promising candidates used in the quest for Majorana zero modes (MZMs). However, InAs nanowires often exhibit a high…

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully…

We demonstrate an on-chip Silicon-on-Insulator (SOI) axicon etched using a low resolution (200 nm feature size, 250 nm gap) deep-ultraviolet lithographic fabrication. The axicon consists of circular gratings with seven stages of 1x2…

Silicon-on-insulator (SOI) enables for capability improvement of modern information processing systems by replacing some of their electrical counterparts. With the miniaturization of SOI platform, backscattering suppression is one of the…

Silicon photonics provides a versatile platform for large-scale integration of optical functions, but its weak intrinsic nonlinear response limits the realization of active, intensity-dependent functionalities. Hybrid integration of…

Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field and local proximitized magnetic exchange. In this work, we present lattice matched hybrid…

We report on fabrication of single-electron transistors using InAs nanowires with epitaxial aluminium with fixed tunnel barriers made of aluminium oxide. The devices exhibit a hard superconducting gap induced by the proximized aluminium…

Making ultra-short gate-length transistors significantly contributes to scaling the contacted gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for enhanced logic density scaling. As we push the…

New blends of simply synthesized quasi two-dimensional (quasi-2D) hydrophobic perovskite semiconductors, employed in high performance light emitting diodes (LEDs) which function due to excitonic energy transfer effects, are reported. These…

Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated…

Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator…

We present a study on the intersublevel spacings of electrons and holes in a single layer of InAs self-assembled quantum dots (SAQDs) using Fourier transform infrared (FTIR) transmission spectroscopy without the application of an external…

A device and process strategy for achieving reliable indium gallium zinc oxide and indium oxide transistors compatible with a 400oC BEOL thermal budget and without performance degradation is demonstrated by fully exploiting intrinsic oxide…

The complex ac conductivity of thin highly disordered InOx films was studied as a function of magnetic field through the nominal two-dimensional superconductor-insulator transition. We have resolved a significant finite-frequency superfluid…

The discovery of high-temperature superconductivity in FeSe/SrTiO3 has sparked significant interests in exploring new superconducting systems with engineered interfaces. Here, using molecular beam epitaxy growth, we successfully fabricate…

We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information -…

Superconducting quantum circuits provide a versatile platform for studying quantum materials by leveraging precise microwave control and utilizing the tools of circuit quantum electrodynamics (QED). Hybrid circuit devices incorporating…

Inherent properties of superconducting Bi2Sr2CaCu2O8+x films, such as the high superconducting transition temperature Tc, efficient Josephson coupling between neighboring CuO layers, and fast quasiparticle relaxation dynamics, make them a…

An approach is developed for the determination of the current flowing through a nanosize silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFET). The quantum mechanical features of the electron transport are…

Topological insulators (TIs) are a promising class of materials for manipulating the magnetization of an adjacent ferromagnet (FM) through the spin-orbit torque (SOT) mechanism. However, current studies combining TIs with conventional FMs…