Related papers: Electrolyte gate-controlled Kondo effect in SrTiO3
In a common paradigm, the electronic structure of condensed matter is divided into weakly and strongly correlated compounds. While conventional band theory usually works well for the former class, many-body effects are essential for the…
Electronic transport experiments involving the topologically protected states found at the surface of Bi2Se3 and other topological insulators require fine control over carrier density, which is challenging with existing bulk-doped material.…
The recent development in the fabrication of artificial oxide heterostructures opens new avenues in the field of quantum materials by enabling the manipulation of the charge, spin and orbital degrees of freedom. In this context, the…
We analyze the equilibrium transport properties of underscreened Kondo effect in the case of a two-level quantum dot coupled to ferromagnetic leads. Using the numerical renormalization group (NRG) method, we have determined the gate voltage…
We study the interplay of the Kondo effect and spin-polarized tunneling in a class of systems exhibiting uniaxial magnetic anisotropy, such as magnetic molecules, magnetic adatoms, or quantum dots coupled to a single localized magnetic…
The observation of metallic interface between band insulators LaAlO$_3$ and SrTiO$_3$ has led to massive efforts to understand the origin of the phenomenon as well as to search for other systems hosting such two dimensional electron gases…
Two-dimensional electron gases in SrTiO3-based heterostructures provide a platform to study the real-time evolution of the macroscopic state with a variation of the carrier density, and the impact of structural properties on the emergence…
The two-dimensional metal forming at the interface between an oxide insulator and SrTiO3 provides new opportunities for oxide electronics. However, the quantum Hall effect, one of the most fascinating effects of electrons confined in two…
We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to…
The question whether excess electrons in SrTiO3 form free or trapped carriers is a crucial aspect for the electronic properties of this important material. This fundamental ambiguity prevents a consistent interpretation of the puzzling…
We observe a strong Kondo effect in a semiconductor quantum dot when a small magnetic field is applied. The Coulomb blockade for electron tunneling is overcome completely by the Kondo effect and the conductance reaches the unitary-limit…
Transport measurements at cryogenic temperatures through a few electron top gated quantum dot fabricated in a silicon/silicon-germanium heterostructure are reported. Variations in gate voltage induce a transition from an isolated dot toward…
We present a quantitative theory of the gate-voltage tuned superconductor-to-insulator transition (SIT) observed experimentally in the 2D electron liquid created in the (111) interface between crystalline SrTiO_3 and LaAlO_3 . Considering…
The quasi-two-dimensional electronic gas at the (111) SrTiO$_3$-based heterostructure interfaces is described by a multi-band tight-binding model providing electronic bands in agreement at low energies with photoemission experiments. We…
Magnetic frustrations can enhance quantum zero-point motion in spin systems and lead to exotic topological insulating states. When coupled to mobile electrons, they may lead to unusual non-Fermi liquid or metallic spin liquid states whose…
Using the perturbative scaling and the NRG, we study the characteristic energy scales in the Kondo impurity problem as a function of the exchange coupling constant $J$ and the conduction electron density. We discuss the relation between the…
Electrically controllable magnetism, which requires the field-effect manipulation of both charge and spin degrees of freedom, has attracted growing interests since the emergence of spintronics. In this work, we report the reversible…
The atomic thickness of two-dimensional (2D) materials provides a unique opportunity to control material properties and engineer new functionalities by electrostatic doping. Electrostatic doping has been demonstrated to tune the electrical…
Paraelectrical tuning of a charge carrier density as high as 10$^{13}$\,cm$^{-2}$ in the presence of a high electronic carrier mobility on the delicate surfaces of correlated oxides, is a key to the technological breakthrough of a field…
Two-dimensional electron gases (2DEGs) on the SrTiO3 (STO) surface or in STO-based heterostructures have exhibited many intriguing phenomena, which are strongly dependent on the 2DEG-carrier density. We report that the tunability of the…