Related papers: Triangulating tunneling resonances in a point cont…

We identify optimal operating conditions of an entangling two-qubit gate realized by a capacitive coupling of two superconducting charge qubits in a transmission line resonator (the so called "transmons"). We demonstrate that the…

A key challenge for semiconductor quantum-dot charge qubits is the realization of long-range qubit coupling and performing high-fidelity gates based on it. Here, we describe a new type of charge qubit formed by an electron confined in a…

We discuss the conductance of a Luttinger liquid interrupted by a quantum dot containing a single resonant level. Using bosonisation and re-fermionisation methods, we find a mapping to a Kondo-type problem which possesses a non-trivial…

We report thermally activated transport resonances for biases below the superconducting energy gap in a carbon nanotube (CNT) quantum dot (QD) device with a superconducting Pb and a normal metal contact. These resonances are due to the…

The transmon, which has a short gate time and remarkable scalability, is the most commonly utilized superconducting qubit, based on the Cooper pair box as a qubit or coupler in superconducting quantum computers. Lattice and heavy-hexagon…

It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the…

We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…

Resonant tunnelling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials…

We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can…

The topic of this contribution is the investigation of quantum states and quantum Hall effect in electron gas subjected to a periodic potential of the lateral lattice. The potential is formed by triangular quantum antidos located on the…

We report on spectroscopy of a single dopant atom in silicon by resonant tunneling between source and drain of a gated nanowire etched from silicon on insulator. The electronic states of this dopant isolated in the channel appear as…

We develop an approach on how to define single-point interactions under the application of external fields. The essential feature relies on an asymptotic method based on the one-point approximation of multi-layered heterostructures that are…

We have observed signatures of resonant tunneling in an Al three-junction qubit, inductively coupled to a Nb LC tank circuit. The resonant properties of the tank oscillator are sensitive to the effective susceptibility (or inductance) of…

We propose a cavity-mediated gate between two transmon qubits or other nonlinear superconducting elements. The gate is realized by driving both qubits at a frequency that is near-resonant with the frequency of the cavity. Since both qubits…

Semiconductor devices continue to press into the nanoscale regime, and new applications have emerged for which the quantum properties of dopant atoms act as the functional part of the device, underscoring the necessity to probe the quantum…

We report the observation of two fundamental sub-gap transport processes through a quantum dot (QD) with a superconducting contact. The device consists of a carbon nanotube contacted by a Nb superconducting and a normal metal contact.…

In a tunneling experiment across a quantum dot it is possible to change the coupling between the dot and the contacts at will, by properly tuning the trasparency of the barriers and the temperature. Gate voltages allow for changes of the…

Tunneling two level systems affect damping, noise and decoherence in a wide range of devices, including nanoelectromechanical resonators, optomechanical systems, and qubits. Theoretically this interaction is usually described within the…

We study effects of Coulomb interactions between localised states in a potential barrier by measuring resonant-tunneling spectra with a small bias applied along the barrier. In the ohmic regime the conductance of 0.2um--gate lateral GaAs…

Double barrier GaN/AlN resonant tunneling heterostructures have been grown by molecular beam epitaxy on the (0001) plane of commercially available bulk GaN substrates. Resonant tunneling diodes were fabricated; room temperature…