Related papers: Observation of spin-selective tunneling in SiGe na…
Semiconductors with strong spin-orbit interactions can exhibit a helical gap with spin-momentum locking opened by a magnetic field. Such a gap is highly spin selective as a result of a topologically protected spin-momentum locking, which…
We consider spin-dependent tunneling through a gallium arsenide barrier, a material which has no inversion symmetry. We are dealing with free electrons, with one effective mass and a spin-splitting in the barrier material. When we take into…
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even at moderate spin injection coefficients of the contact when…
Spin splitting in p-type semiconductor nanowires is strongly affected by the interplay between quantum confinement and spin-orbit coupling in the valence band. The latter's particular importance is revealed in our systematic theoretical…
The wave nature of electrons in semiconductor nanostructures results in spatial interference effects similar to those exhibited by coherent light. The presence of spin-orbit coupling renders interference in spin space and in real space…
An important consequence of the discovery of giant magnetoresistance in metallic magnetic multilayers is a broad interest in spin dependent effects in electronic transport through magnetic nanostructures. An example of such systems are…
The presence of spin-orbit scattering within an aluminum nanoparticle affects measurements of the discrete energy levels within the particle by (1) reducing the effective g-factor below the free-electron value of 2, (2) causing avoided…
The proximity effect refers to the phenomenon whereby superconducting properties are induced in a normal conductor that is in contact with an intrinsically superconducting material. In particular, the combination of nano-structured…
We study theoretically the spin transport in a nonmagnetic metal connected to ferromagnetic injector and detector electrodes. We derive a general expression for the spin accumulation signal which covers from the metallic to the tunneling…
We calculate the rates of phonon-assisted hyperfine spin flips during electron and hole tunneling between quantum dots in a self-assembled quantum dot molecule. We show that the hyperfine process dominates over the spin-orbit-induced spin…
We report on the possibility for a spin valve effect driven by edge defect engineering of zigzag graphene nanoribbons. Based on a mean-field spin unrestricted Hubbard model, electronic band structures and conductance profiles are derived,…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent…
Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their…
Resonant tunneling through semimetallic ErAs quantum wells embedded in GaAs structures with AlAs barriers was recently found to exhibit an intriguing behavior in magnetic fields which is explained in terms of tunneling selection rules and…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…
The electron spin is emerging as a new powerful tool in the electronics and optics industries. Many proposed applications involve the creation of spin currents, which so far have proven to be difficult to produce in semiconductor…
We study a two-dimensional electron system in the presence of spin-orbit interaction. It is shown analytically that the spin-orbit interaction acts as a transversal effective electric field, whose orientation depends on the sign of the…
The spin-resolved thermoelectric transport properties of correlated nanoscale junctions, consisting of a quantum dot/molecule asymmetrically coupled to external ferromagnetic contacts, are studied theoretically in the far-from-equilibrium…
We study theoretically the low-energy hole states of Ge/Si core/shell nanowires. The low-energy valence band is quasidegenerate, formed by two doublets of different orbital angular momenta, and can be controlled via the relative shell…