Related papers: Charge control in InP/GaInP single quantum dots em…
We report a photoluminescence (PL) spectroscopy study of charge state control in single self-assembled InAs/GaAs quantum dots by applying electric and/or magnetic fields at 4.2 K. Neutral and charged exciton complexes were observed under…
Electron transfer to an individual quantum dot promotes the formation of charged excitons with enhanced recombination pathways and reduced lifetimes. Excitons with only one or two extra charges have been observed and exploited for very…
We present a comprehensive study of the optical transitions and selection rules of variably charged single self-assembled InAs/GaAs quantum dots. We apply high resolution polarization sensitive photoluminescence excitation spectroscopy to…
We report on single InGaAs quantum dots embedded in a lateral electric field device. By applying a voltage we tune the neutral exciton transition into resonance with the biexciton using the quantum confined Stark effect. The results are…
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting…
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-living, spatially indirect excitons. We study the transition…
We have studied the emission properties of self-organized InAs quantum dots (QDs) grown in an InGaAs quantum well by metalorganic chemical vapor deposition. Low-temperature photoluminescence spectroscopy shows emission from single QDs…
The optical properties of single InAsP/InP quantum dots are investigated by spectrally-resolved and time-resolved photoluminescence measurements as a function of excitation power. In the short-wavelength region (below 1.45 $\mu$m), the…
We report the design, fabrication and optical investigation of electrically tunable single quantum dot - photonic crystal defect nanocavities operating in both the weak and strong coupling regimes of the light matter interaction. Unlike…
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However,…
Single and multi-band (Burt-Foreman) k.p Hamiltonians for GaAs crystal phase quantum dots are developed and used to assess ongoing experimental activity on the role of such factors as quantum confinement, spontaneous polarization, valence…
Excitonic spectra are calculated for free-standing, surface passivated InAs quantum dots using atomic pseudopotentials for the single-particle states and screened Coulomb interactions for the two-body terms. We present an analysis of the…
We report on the observation of photoluminescence from positive, neutral and negative charge states of single semiconductor quantum dots. For this purpose we designed a structure enabling optical injection of a controlled unequal number of…
Telecom wavelength quantum dots (QDs) are emerging as a promising solution for generating deterministic single photons compatible with existing fiber optic infrastructure. Emission in the low loss C band minimizes transmission losses,…
Single photon emission was observed from site-controlled InGaN/GaN quantum dots. The single-photon nature of the emission was verified by the second-order correlation function up to 90 K, the highest temperature to date for site-controlled…
We present a comprehensive study of the optical properties of InAs/InP self-assembled quantum dots (QDs) using an empirical pseudopotential method and configuration interaction treatment of the many-particle effects. The results are…
The ground state of neutral and negatively charged excitons confined to a single self-assembled InGaAs quantum dot is probed in a direct absorption experiment by high resolution laser spectroscopy. We show how the anisotropic electron-hole…
We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots, fabricated from a planar light-emitting diode structure containing a single InGaN quantum well using a top-down approach. The location,…
We investigate experimentally and theoretically few-particle effects in the optical spectra of single quantum dots (QDs). Photo-depletion of the QD together with the slow hopping transport of impurity-bound electrons back to the QD are…