Related papers: Valley-based noise-resistant quantum computation u…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillary spectator qubits but makes use of the valley degree of…
Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-loop control and improve qubit performance. Here, we propose a…
Current semiconductor qubits rely either on the spin or on the charge degree of freedom to encode quantum information. By contrast, in bilayer graphene the valley degree of freedom, stemming from the crystal lattice symmetry, is a robust…
One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst…
We report electronic transport measurements through a silicon hybrid double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley…
An electron spin qubit in silicon quantum dots holds promise for quantum information processing due to the scalability and long coherence. An essential ingredient to recent progress is the employment of micromagnets. They generate a…
In Si quantum dot systems, large magnetic field gradients are needed to implement spin rotations via electric dipole spin resonance (EDSR). By increasing the effective electron dipole, flopping mode qubits can provide faster gates with…
Silicon quantum dot qubits must contend with low-lying valley excited states which are sensitive functions of the quantum well heterostructure and disorder; quantifying and maximizing the energies of these states are critical to improving…
We study the relaxation of an electron spin qubit in a Si quantum dot due to electrical noise. In particular, we clarify how the presence of conduction-band valleys influences spin relaxation. In single-valley semiconductor quantum dots,…
Electron states are studied for quantum dots in a strained Si quantum well, taking into account both valley and orbital physics. Realistic geometries are considered, including circular and elliptical dot shapes, parallel and perpendicular…
Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical…
The bandstructure of bulk silicon has a six-fold valley degeneracy. Strain in the Si/SiGe quantum well system partially lifts the valley degeneracy, but the materials factors that set the splitting of the two lowest lying valleys are still…
We measure and analyze noise-induced energy-fluctuations of spin qubits defined in quantum dots made of isotopically natural silicon. Combining Ramsey, time-correlation of single-shot measurements, and CPMG experiments, we cover the qubit…
We perform an excited state spectroscopy analysis of a silicon corner dot in a nanowire field-effect transistor to assess the electric field tunability of the valley splitting. First, we demonstrate a back-gate-controlled transition between…
Semiconductor quantum dots offer a promising platform for controlling spin qubits and realizing quantum logic gates, essential for scalable quantum computing. In this work, we utilize a variational quantum compiling algorithm to design…
The presence of valley states is a significant obstacle to realizing quantum information technologies in Silicon quantum dots, as leakage into alternate valley states can introduce errors into the computation. We use a perturbative…
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots…
We test the valley-filtering capabilities of a quantum dot inscribed by locally straining an $\alpha$-$\mathcal{T}_3$ lattice. Specifically, we consider an out-of-plane Gaussian bump in the center of a four-terminal configuration and…
Although electron spins in III-V semiconductor quantum dots have shown great promise as qubits, a major challenge is the unavoidable hyperfine decoherence in these materials. In group IV semiconductors, the dominant nuclear species are…