Related papers: Perfect Andreev Reflection of Helical Edge Modes i…
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…
We have fabricated a superconductor/semiconductor (S/Sm) junction composed of Al and InAs using cleaved edge overgrowth. By exploiting the unique geometry with a thin Al/Pt/Al trilayer formed on the side surface of an in-situ cleaved…
We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the…
We experimentally investigate transport through the side junction between a niobium superconductor and the mesa edge of a two-dimensional system, realized in an InAs/GaSb double quantum well with band inversion. We demonstrate, that…
We investigate electron transport through the interface between a niobium superconductor and the edge of a two-dimensional semimetal, realized in a 20~nm wide HgTe quantum well. Experimentally, we observe that typical behavior of a single…
We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong…
Proximity-induced superconductivity in fractional quantum Hall edges is a prerequisite to proposed realizations of parafermion zero-modes. A recent experimental work [G\"{u}l et al., Phys. Rev. X 12, 021057 (2022)] provided evidence for…
Parafermionic zero modes are a novel set of excitations displaying non-Abelian statistics somewhat richer than that of Majorana modes. These modes are predicted to occur when nearby fractional quantum Hall edge states are gapped by an…
We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of InAs/GaSb spectrum, we study samples with 10 nm, 12 nm, and 14 nm…
Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes…
The edge states of a quantum spin Hall insulator exhibit helical properties, which has generated significant interest in the field of spintronics. Although it is predicted theoretically that Rashba spin-orbit coupling can effectively…
The recent development of superconducting spintronics has revealed the spin-triplet superconducting proximity effect from a spin-singlet superconductor into a spin-polarized normal metal. In addition recently superconducting junctions using…
Complete suppression of the native n-type Schottky barrier is demonstrated in Al/InGaAs(001) junctions grown by molecular-beam-epitaxy. This result was achieved by the insertion of Si bilayers at the metal-semiconductor interface allowing…
Mainstream among topological insulators, GaSb/InAs quantum wells present a broken gap alignment for the energy bands which supports the quantum spin Hall insulator phase and forms an important building block in the search of exotic states…
We study clean, edge-contacted graphene/superconductor interfaces in both the quantum Hall (QH) and zero field regimes. We find that Andreev reflection is substantially stronger than at an interface with a semiconductor two-dimensional…
Novel fermions with a pseudospin-1 structure can be realized as emergent quasiparticles in condensed matter systems. Here, we investigate its unusual properties during the Andreev reflection at a normal-metal/superconductor (NS) interface.…
Dynamic conductance spectra are taken from Au/CeCoIn$_5$ point contacts in the Sharvin limit along the (001) and (110) directions. Our conductance spectra, reproducibly obtained over wide ranges of temperature, constitute the cleanest data…
We investigate the Andreev reflection process in high-mobility HgTe/CdTe quantum wells. We find that Andreev conductance probes the dynamics of massive 2+1 Dirac fermions, and that both specular Andreev reflection and retroreflection can be…
We study Andreev reflection in a ballistic one-dimensional channel coupled in parallel to a superconductor via a tunnel barrier of finite length $L$. The dependence of the low-energy Andreev reflection probability $R_A$ on $L$ reveals the…
Electrons incident from a normal metal onto a superconductor are reflected back as holes - a process called Andreev reflection. In a normal metal where the Fermi energy is much larger than a typical superconducting gap, the reflected hole…