Related papers: Process Optimization and Downscaling of a Single E…
This paper presents a set of models dedicated to describe a flash storage subsystem structure, functions, performance and power consumption behaviors. These models cover a large range of today's NAND flash memory applications. They are…
Thin-film-based nanoporous membrane technologies exploit evaporation to efficiently cool microscale and nanoscale electronic devices. At these scales, when domain sizes become comparable to the mean free path in the vapour, traditional…
Solid-state storage architectures based on NAND or emerging memory devices (SSD), are fundamentally architected and optimized for both reliability and performance. Achieving these simultaneous goals requires co-design of memory components…
Phase change memory has been developed into a mature technology capable of storing information in a fast and non-volatile way, with potential for neuromorphic computing applications. However, its future impact in electronics depends…
Implementing optical-based memory and utilizing it for computation on the nanoscale remains an attractive but still a challenging task. While significant progress was achieved in nanophotonics, allowing to explore nonlinear optical effects…
Amorphous insulators have localized wave functions that decay with the distance $r$ following exp($-r/\zeta$). Since nanoscale conduction is not excluded at $r<\zeta$, one may use amorphous insulators and take advantage of their size effect…
Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing. For…
As widely used electrochemical storage devices, supercapacitors deliver higher power density than batteries, but suffer from significantly lower energy density. In this work, we propose a topology optimization model for electrode structure…
The advent of devices based on single dopants, such as the single atom transistor, the single spin magnetometer and the single atom memory, motivates the quest for strategies that permit to control matter with atomic precision. Manipulation…
Semiconductor nanowires offer the possibility to grow high-quality quantum-dot heterostructures, and, in particular, CdSe quantum dots inserted in ZnSe nanowires have demonstrated the ability to emit single photons up to room temperature.…
We demonstrate all optical electron spin initialization, storage and readout in a single self-assembled InGaAs quantum dot. Using a single dot charge storage device we monitor the relaxation of a single electron over long timescales…
Deep Neural Networks (DNNs) have been established as the state-of-the-art algorithm for advanced machine learning applications. Recently, CapsuleNets have improved the generalization ability, as compared to DNNs, due to their…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…
We report the realization of a completely controllable high-speed nanomechanical memory element fabricated from single-crystal silicon wafers. This element consists of a doubly-clamped suspended nanomechanical beam structure, which can be…
Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory'…
High quality metal thin films and nanostructures are critical building blocks for next generation nanotechnologies. They comprise low-loss circuit elements in nanodevices, provide new catalytic pathways for water splitting and $CO_2$…
We measured the polarization memory of excitonic and biexcitonic optical transitions from single quantum dots at either positive, negative or neutral charge states. Positive, negative and no circular or linear polarization memory was…
The scaling of high density NOR Flash memory devices with multi level cell (MLC) hits the reliability break wall because of relatively high intrinsic bit error rate (IBER). The chip maker companies offer two solutions to meet the output bit…
This paper summarizes our work on experimentally analyzing, exploiting, and addressing vulnerabilities in multi-level cell NAND flash memory programming, which was published in the industrial session of HPCA 2017, and examines the work's…