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X-ray analysis of ferroelectric thin layers of Ba1/2Sr1/2TiO3 with different thickness reveals the presence of internal strain gradients across the film thickness and allows us to propose a functional form for the internal strain profile.…

Materials Science · Physics 2009-11-10 G. Catalan , B. Noheda , J. McAneney , L. Sinnamon , J. M. Gregg

The coupling between strain gradients and polarization, known as flexoelectricity, offers a new mechanism to control the functionality of dielectric materials. However, for the effect to be practically attractive, dynamic control of the…

Flexoelectricity describes the coupling between polarization and strain/stress gradients in insulating crystals. In this paper, using the Landau-Ginsburg-Devonshire phenomenological approach, we found that flexoelectricity could increase…

Materials Science · Physics 2015-06-04 Hao Zhou , Jiawang Hong , Yihui Zhang , Faxin Li , Yongmao Pei , Daining Fang

Flexoelectricity is a universal effect that generates electric polarization due to broken inversion symmetry caused by local strain gradient. The large strain gradient at nanoscale makes flexo-electric effects, especially in nanoscopic…

Materials Science · Physics 2025-05-30 Xin Li , Guodong Ren , Yu Yun , Arashdeep Singh Thind , Amit Kumar Shah , Abbey Bowers , Rohan Mishra , Xiaoshan Xu

We report on the dielectric properties of epitaxial [001] and [100]-textured thin films of antiferromagnetic orthorhombic YMnO3 and their variation under compressive epitaxial strain. It is found that weakly strained YMnO3 films are…

Materials Science · Physics 2010-12-15 J. Fontcuberta , I. Fina , L. Fàbrega , F. Sánchez , X. Martí , V. Skumryev

Flexoelectricity - polarization induced by strain gradients - offers a route to polar functionality in centrosymmetric dielectrics, where traditional piezoelectric effects are absent. This study investigates the flexoelectric effect in…

The discovery of ferroelectricity in both pure and doped HfO$_2$-based thin films have revitalized the interest in using ferroelectrics for nanoscale device applications. To take advantage of this silicon-compatible ferroelectric,…

Materials Science · Physics 2019-05-22 Shi Liu , Brendan M Hanrahan

Epitaxial strain can be used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate how, by using a suitable combination of composition…

Materials Science · Physics 2015-05-20 Gijsbert Rispens , Jeroen A. Heuver , Beatriz Noheda

Multiferroic BiFeO3 epitaxial films with thickness ranging from 40 nm to 960 nm were grown by pulsed laser deposition on SrTiO3 (001) substrates with SrRuO3 bottom electrodes. X-ray characterization shows that the structure evolves from…

Materials Science · Physics 2009-11-13 Dae Ho Kim , Ho Nyung Lee , Michael D. Biegalski , Hans M. Christen

We report first-principle atomistic simulations on the effect of local strain gradients on the nanoscale domain morphology of free-standing PbTiO$_3$ ultrathin films. First, the ferroelectric properties of free films at the atomic level are…

Materials Science · Physics 2015-06-22 G. D. Belletti , S. D. Dalosto , Silvia Tinte

This review covers the important advances in recent years in the physics of thin film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin film form. We introduce the current state of…

Materials Science · Physics 2009-11-11 M. Dawber , K. M. Rabe , J. F. Scott

Elastic strain is potentially an important approach in tuning the properties of the improperly multiferroic hexagonal ferrites, the details of which have however been elusive due to the experimental difficulties. Employing the method of…

Density functional calculations are performed to study the effect of epitaxial strain on PbZrO3. We find a remarkably small energy difference between the epitaxially strained polar R3c and nonpolar Pbam structures over the full range of…

Materials Science · Physics 2014-05-15 Sebastian E. Reyes-Lillo , Karin M. Rabe

Modern electromechanical actuators and sensors rely on the piezoelectric effect that linearly couples strain and electric polarization. However, this effect is restricted to materials that lack inversion symmetry. In contrast, the…

Much attention has been given recently to flexible and wearable integrated-electronic devices, with a strong emphasis on real-time sensing, computing and communication technologies. Thin ferroelectric films exhibit switchable polarization…

Applied Physics · Physics 2019-04-01 Rachel Onn Winestook , Cecile Saguy , Chun-Hao Ma , Ying-Hao Chu , Yachin Ivry

The flexoelectric behaviors of solids under high strain gradient can be distinct from that under low strain gradient. Using the generalized Bloch theorem, we investigate theoretically the transversal flexoelectric effects in bent MgO…

Computational Physics · Physics 2021-12-13 Chao He , Jin-Kun Tang , Yang Yang , Kai Chang , Dong-Bo Zhang

Zirconia and hafnia based thin films have attracted tremendous attention in the last decade due to their unexpected ferroelectric behavior at the nanoscale, which facilitates the downscaling of ferroelectric devices. The present work…

Functional properties of ferroelectric thin films are governed by domains that can be engineered by epitaxial strain. Soft X-ray microscopy can image domain structures with elemental and electronic sensitivity, but hitherto its application…

We studied the ferroelectric and ferromagnetic properties of compressive strained and unstrained BiMnO3 thin films grown by rf-magnetron sputtering. BiMnO3 samples exhibit a 2D cube-on-cube growth mode and a pseudo-cubic struc-ture up to a…

Materials Science · Physics 2013-06-06 G. M. De Luca , D. Preziosi , F. Chiarella , R. Di Capua , S. Gariglio , S. Lettieri , M. Salluzzo

We reveal that strong flexoelectric effect of solids can be induced due to the signfi?cant charge migration along the strain gradient direction, which represents a new understanding of the origin of flexoelectricity. Beyond the linear…

Materials Science · Physics 2020-08-27 Dong-Bo Zhang , Kai Chang
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