Related papers: The Memory-Conservation Theory of Memristance
In 2008, researchers at the Hewlett-Packard (HP) laboratories claimed to have found an analytical physical model for a genuine memristor device [1]. The model is considered for a thin TiO_2 film containing a region which is highly…
It is noticed that the inductive and capacitive features of the memristor reflect (and are a quintessence of) such features of any resistor. The very presence in the resistive characteristic v = f(i) of the voltage and current state…
In 1971, Chua defined an ideal memristor that links charge q and flux phi. In this work, we demonstrated that the direct interaction between physical charge q and physical flux phi is memristive by nature in terms of a time-invariant phi-q…
The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…
We suggest electronic circuits with memristors (resistors with memory) that operate as memcapacitors (capacitors with memory) and meminductors (inductors with memory). Using a memristor emulator, the suggested circuits have been built and…
A memristor is a nonlinear two-terminal electrical element that incorporates memory features and nanoscale properties, enabling us to design very high-density artificial neural networks. To enhance the memory property, we should use…
In this paper, we briefly review the concept of memory circuit elements, namely memristors, memcapacitors and meminductors, and then discuss some applications by focusing mainly on the first class. We present several examples, their…
The recent design of a nanoscale device with a memristive characteristic has had a great impact in nonlinear circuit theory. Such a device, whose existence was predicted by Leon Chua in 1971, is governed by a charge-dependent…
The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…
Recently, in addition to the well-known resistor, capacitor and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale…
Networks with memristive devices are a potential basis for the next generation of computing devices. They are also an important model system for basic science, from modeling nanoscale conductivity to providing insight into the…
We experimentally demonstrate a proof-of-principle implementation of an almost ideal memristor - a two-terminal circuit element whose resistance is approximately proportional to the integral of the input signal over time. The demonstrated…
Memristors are passive elements that allow us to store information using a single element per bit. However, this is not the only utility of the memristor. Considering the physical chemical structure of the element used, the memristor can…
The memristive device is one of the basic elements of novel, brain-inspired, fast, and energy-efficient information processing systems in which there is no separation between memorization and information analysis functions. Since the first…
We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…
Memory effects are ubiquitous in nature and the class of memory circuit elements - which includes memristors, memcapacitors and meminductors - shows great potential to understand and simulate the associated fundamental physical processes.…
Memristor (resistor with memory), inductor with memory (meminductor) and capacitor with memory (memcapacitor) have different roles to play in novel computing architectures. We found that a coil with a magnetic core is an inductor with…
It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an…
Redox-based nanoionic resistive memory cells (ReRAMs) are one of the most promising emerging nano-devices for future information technology with applications for memory, logic and neuromorphic computing. Recently, the serendipitous…