Related papers: Low-temperature photocarrier dynamics in monolayer…
The dynamics of excited electrons and holes in single layer (SL) MoS$_2$ have so far been difficult to disentangle from the excitons that dominate the optical response of this material. Here, we use time- and angle-resolved photoemission…
The fine structure of the exciton spectrum, containing optically allowed (bright) and forbidden (dark) exciton states, determines the radiation efficiency in nanostructures. We study time-resolved micro-photoluminescence in MoS$_2$…
We present the micro-photoluminescence ($\mu$PL) and micro-reflectance contrast spectroscopy studies on thin films of MoSe2 with layer thicknesses ranging from a monolayer (1L) up to 5L. The thickness dependent evolution of the ground and…
We explore the optical dipole orientation of single photon emitters in monolayer MoS2 as produced by a focused helium ion beam. The single photon emitters can be understood as single sulfur vacancies. The corresponding far-field…
Semiconducting 2D materials, such as molybdenum disulfide (MoS2) and other members of the transition metal dichalcogenide family, have emerged as promising materials for applications in high performance nanoelectronics that exhibit…
Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena - critical to…
Monolayer molybdenum disulphide (MoS2) is a promising two-dimensional direct-bandgap semiconductor with potential applications in atomically thin and flexible electronics. An attractive insulating substrate or mate for MoS2 (and related…
We characterize heat dissipation of supported molybdenum disulfide (MoS$_2$) monolayers grown by chemical vapor deposition by means of ambient-condition scanning thermal microscopy (SThM). We find that the thermal boundary conductance of…
A fundamental understanding of the intrinsic optoelectronic properties of atomically thin transition metal dichalcogenides (TMDs) is crucial for its integration into high performance semiconductor devices. Here, we investigate the transport…
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of…
Atomically thin MoS2 layer is a direct bandgap semiconductor exhibiting strong electron-hole interaction due to the extreme quantum confinement and reduced screening of Coulomb interactions, which results in the formation of stable excitons…
We show how to correctly extract from the ellipsometric data the surface susceptibility and the surface conductivity that describe the optical properties of monolayer $\rm MoS_2$. Theoretically, these parameters stem from modelling a…
We show room temperature valley coherence with in MoS2, MoSe2, WS2 and WSe2 monolayers using linear polarization resolved hot photoluminescence (PL), at energies close to the excitation - demonstrating preservation of valley coherence…
Monolayers (MLs) of transition metal dichalcogenides (TMDs) such as WSe2 and MoSe2 can be placed by dry stamping directly on broadband dielectric resonators, which have the ability to enhance the spontaneous emission rate and brightness of…
Two-dimensional (2D) semiconductors have been proposed for heterogeneous integration with existing silicon technology; however, their chemical vapor deposition (CVD) growth temperatures are often too high. Here, we demonstrate direct CVD…
The possibility of spatially resolving the optical properties of atomically thin materials is especially appealing as they can be modulated at the micro- and nanoscale by reducing their thickness, changing the doping level or applying a…
Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily applied in a controlled way, e.g., by bending of a flexible…
Quantum systems in confined geometries are host to novel physical phenomena. Examples include quantum Hall systems in semiconductors and Dirac electrons in graphene. Interest in such systems has also been intensified by the recent discovery…
In this study,we combined time-resolved terahertz spectroscopy along with transient absorption spectroscopy to revisit the interlayer non-equilibrium carrier dynamics in largely lateral size Gr/MoS2 heterostructure fabricated with chemical…
Control on spatial location and density of defects in 2D materials can be achieved using electron beam irradiation. Conversely, ultralow accelerating voltages (less than or equal to 5kV) are used to measure surface morphology, with no…