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Binary collision simulations of high-fluence 1 keV Si ion implantation into 8 nm thick SiO2 films on (001)Si were combined with kinetic Monte Carlo simulations of Si nanocrystal (NC) formation by phase separation during annealing. For…

Materials Science · Physics 2009-11-07 Torsten Mueller , Karl-Heinz Heinig , Wolfhard Moeller

In Si nanowire (SiNW) solar cells enhanced light confinement property in addition to decoupling of charge carrier collection and light absorption directions plays a significant role to resolve the draw backs of bulk Si solar cells. In this…

For future nanoelectronic devices - such as room-temperature single electron transistors - the site-controlled formation of single Si nanocrystals (NCs) is a crucial prerequisite. Here, we report an approach to fabricate single Si NCs via…

Lead halide perovskite nanocrystals (NCs) are currently emerging as one of the most interesting solution processed semiconductors since they possess high photoluminescence quantum yield (PLQY), and colour tunability through anion exchange…

Silicon, despite its abundance and high energy density, remains underexplored as a carbon-free fuel, with limited data available on its combustion characteristics. In this work, the combustion behaviour of silicon particles is examined…

Applied Physics · Physics 2025-09-30 Herman , Heng , Hugo Keck , Christian Chauveau , Samuel Goroshin , Jeffrey Bergthorson , Fabien Halter

This study explores the impact of an optimized amorphous silicon (a-Si) buffer layer on AlxIn1-xN-on-Si(100) heterojunction solar cells, with Al content varying from 0% (InN) to 55%. The buffer layer improves the structural quality of the…

Materials Science · Physics 2025-12-05 M. Sun , R. G. Cornejo , M. de la Mata , S. I. Molina , B. Damilano , S. Valdueza-Felip , F. B. Naranjo

We compare, through first-principles pseudopotential calculations, the structural, electronic and optical properties of different size silicon nanoclusters embedded in a SiO2 crystalline or amorphous matrix, with that of free-standing,…

Thin films of VO$_2$ on different substrates, Al$_2$O$_3$ and SiO$_2$/Si, have been prepared and characterized from room temperature up to 360 K. From the band structure in the rutile metallic phase and in the monoclinic insulating phase…

Strongly Correlated Electrons · Physics 2016-09-21 Tobias Peterseim , Martin Dressel , Marc Dietrich , Angelika Polity

The nucleation, distribution, composition and structure of Pd nanocrystals in SiO$_2$ multilayers containing Ge, Si, and Pd are studied using High Resolution Transmission Electron Microscopy (HRTEM) and X-ray Photoelectron Spectroscopy…

Textured silicon surface structures, in particular black silicon (b-Si), open up possibilities for Si-based solar cells and photodetectors to be extremely thin and highly sensitive owing to perfect light-trapping and anti-reflection…

All three motional modes of a charged dielectric nanoparticle in a Paul trap are cooled by direct feedback to temperatures of a few mK. We test two methods, one based on electrical forces and the other on optical forces; for both methods,…

Instrumentation and Detectors · Physics 2021-03-29 Lorenzo Dania , Dmitry S. Bykov , Matthias Knoll , Pau Mestres , Tracy E. Northup

Controlling the transport, trapping, and filtering of nanoparticles is important for many applications. By virtue of their weak response to gravity and their thermal motion, various physical mechanisms can be exploited for such operations…

Materials Science · Physics 2016-11-03 Rasoul Alaee , Muamer Kadic , Carsten Rockstuhl , Ali Passian

Monocrystalline silicon solar cells with photo-absorbing morphology can amplify light-trapping properties within the absorber layer and help to fabricate cost-effective solar cells. In this paper, the effect of different parameters namely…

Applied Physics · Physics 2021-07-30 M. K. Basher , R. Mishan , S. Biswas , M. Khalid Hossain , M. A. R. Akand , M. A. Matin

Ta (100 nm) / NdFeB (5 $\mu$m) / Ta (100 nm) films have been deposited onto Si substrates using triode sputtering (deposition rate ~ 18 $\mu$m/h). A 2-step procedure was used : deposition at temperatures up to 400 C followed by ex-situ…

Materials Science · Physics 2009-11-13 Arnaud Walther , Kirill Khlopkov , Oliver Gutfleisch , Dominique Givord , Nora M. Dempsey

The solid-state reaction was used to synthesize CoO2 nanostructured material. Cobalt nitrate tetrahydrate and sodium oxide (NaOH) were combined to produce CoO2 nanostructured material. The three synthesized working electrodes were each…

Materials Science · Physics 2025-02-12 Shoaib Akram , Muneeb ur Rahman , Fazli Maula , Osama Tariq Satti , Shahbaz Afzal , Fawad Ali

Second harmonic (SH) radiation can only be generated in non-centrosymmetric bulk crystals under the electric-dipole approximation. Nonlinear thin films made from bulk crystals are technologically challenging because of complex and high…

Topological insulator (TI) states have been demonstrated in materials with narrow gap and large spin-orbit interactions (SOI). Here we demonstrate that nanoscale engineering can also give rise to a TI state, even in conventional…

Materials Science · Physics 2015-06-05 M. S. Miao , Q. Yan , C. G. Van de Walle , W. K. Lou , L. L. Li , K. Chang

Si nanocrystals have been extensively studied because of their novel properties and their potential applications in electronic, optoelectronic, photovoltaic, thermoelectric and biological devices. These new properties are achieved through…

Materials Science · Physics 2018-07-17 Ivan Marri , Elena Degoli , Stefano Ossicini

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni…

Gapless surface states on topological insulators are protected from elastic scattering on non-magnetic impurities which makes them promising candidates for low-power electronic applications. However, for wide-spread applications, these…

Strongly Correlated Electrons · Physics 2013-01-09 Z. -H. Pan , A. V. Fedorov , D. Gardner , Y. S. Lee , S. Chu , T. Valla
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