Related papers: Coulomb Blockade in a Coupled Nanomechanical Elect…
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small,…
We study the conductance spectrum of graphene quantum dots, both single and multiple cases. The single electron tunneling phenomenon is investigated and the periodicity, amplitude and line shape of the Coulomb blockade oscillations at low…
The rate-equation approach is used to describe sequential tunneling through a molecular junction in the Coulomb blockade regime. Such device is composed of molecular quantum dot (with discrete energy levels) coupled with two metallic…
We report the fabrication and electrical characterization of a single electron transistor in a modulation doped silicon/silicon-germanium heterostructure. The quantum dot is fabricated by electron beam lithography and subsequent reactive…
We have detected oscillations of the charge around a potential hill (antidot) in a two-dimensional electron gas as a function of a large magnetic field B. The field confines electrons around the antidot in closed orbits, the areas of which…
The electron transport through an array of tunnel junctions consisting of an STM tip and a granular film is studied both theoretically and experimentally. When the tunnel resistance between the tip and a granule on the surface is much…
We offer a general approach to calculation of single-electron tunneling spectra and conductance of a shuttle oscillating between two half-metallic leads with fully spin polarized carriers. In this case the spin-flip processes are completely…
Microwave band on-chip microcoils are developed for the application to single electron spin resonance measurement with a single quantum dot. Basic properties such as characteristic impedance and electromagnetic field distribution are…
A self-consistent-field theory is given for the electronic collective modes of a chain containing a finite number, $N$, of Coulomb-coupled spherical two-dimensional electron gases (S2DE's) arranged with their centers along a straight line,…
We study the transport through a quantum dot coupled to two leads by single-mode point contacts. The linear conductance is calculated analytically as a function of a gate voltage and temperature T in the case when transmission coefficients…
We consider electromechanical properties of a single-electronic device consisting of movable quantum dot attached to a vibrating cantilever, forming a tunnel contact with a non-movable source electrode. We show that the resonance Kondo…
Quantum fluctuations of Coulomb blockade are investigated as a function of the coupling to reservoirs in semiconductor quantum dots. We use fluctuations in the distance between peaks $\Delta N$ apart to characterize both the amplitude and…
For a capacitor made of a semiconducting carbon nanotube (CNT) suspended above a metallic gate, Coulomb correlations between individual electrons can lead to a capacitance that is much larger than the geometric capacitance. We argue that…
We report on the fabrication and measurements of platinum-self-aligned nanogap devices containing cubed iron (core)/iron oxide (shell) nanoparticles (NPs) with two average different sizes (13 and 17 nm). The nanoparticles are deposited by…
In this article we review the thermoelectric properties of three terminal devices with Coulomb coupled quantum dots (QDs) as observed in recent experiments [1,2]. The system we consider consists of two Coulomb-blockade QDs one of which can…
Three terminal tunnelling experiments on quantum dots in the Coulomb blockade regime allow a quantitative determination of the coupling strength of individual quantum states to the leads. Exploiting this insight we have observed independent…
Three terminal single-electron transistor devices utilizing Al/Al2O3 gate electrodes were developed for the study of electron transport through individual single-molecule magnets. The devices were patterned via multiple layers of optical…
We investigate the current-voltage (IV) characteristics of a model single-electron transistor where mechanical motion, subject to strong dissipation, of a small metallic grain is possible. The system is studied both by using Monte Carlo…
A single-electron tunneling (SET) device with a nanoscale central island that can move with respect to the bulk source- and drain electrodes allows for a nanoelectromechanical (NEM) coupling between the electrical current through the device…
Niobium thin film wires were fabricated using electron beam lithography with a four layer liftoff mask system, and subsequently thinned by anodisation. The resistance along the wire was monitored in situ and trimmed by controlling the…