Related papers: Spin Relaxation in Silicon Nanowires
Prospect of building electronic devices in which electron spins store and transport information has revived interest in the spin relaxation of conduction electrons. Since spin-polarized currents cannot flow indefinitely, basic…
We study evolution of electron spin coherence having non-homogeneous direction of spin polarization vector in semiconductor heterostructures. It is found that the electron spin relaxation time due to the D'yakonov-Perel' relaxation…
The density matrix formalism is applied to calculate the spin-relaxation time for two-dimensional systems with a hierarchy of spin-orbit couplings, such as Rashba-type, Dresselhaus-type and so on. It is found that the spin-relaxation time…
Through the theoretical study of electron spin lifetime in the 2DEG of doped Si, we highlight a dominant spin relaxation mechanism induced by the impurity central-cell potential near an interface via intervalley electron scattering. At low…
This work considers the g-tensor anisotropy induced by the flexural thermal vibrations in one-dimensional structures and its role in electron spin relaxation. In particular, the mechanism of spin-lattice relaxation via flexural modes is…
We investigate the longitudinal spin relaxation arising due to spin-flip transitions accompanied by phonon emission in quantum dots where the strength of the Rashba spin-orbit coupling is a random function of the lateral (in-plane)…
Ballistic spin resonance was experimentally observed in a quasi-one-dimensional wire by Frolov et al. [Nature (London) 458, 868 (2009)]. The spin resonance was generated by a combination of an external static magnetic field and the…
Spin relaxation can be greatly enhanced in narrow channels of two-dimensional electron gas due to ballistic spin resonance, which is mediated by spin-orbit interaction for trajectories that bounce rapidly between channel walls. The channel…
We study the nuclear spin relaxation in a ballistic nanowire with hyperfine and Rashba spin-orbit interactions (SOI) and in the presence of magnetic field and electron interactions. The relaxation rate shows pronounced peaks as function of…
We study spin relaxation and decoherence caused by electron-lattice and spin-orbit interaction and predict striking effects induced by magnetic fields $B$. For particular values of $B$, destructive interference occurs resulting in ultralong…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…
Divacancy spins in silicon carbide implement qubits with outstanding characteristics and capabilities in an industrial semiconductor host. On the other hand, there are still numerous open questions about the physics of divacancy point…
We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
We study all of the leading-order contributions to spin relaxation of \textit{conduction} electrons in silicon due to the electron-phonon interaction. Using group theory, $k\cdot p$ perturbation method and rigid-ion model, we derive an…
Resonances in the magnetic decoupling curves for the spin relaxation of dense alkali-metal vapors prove that much of the relaxation is due to the spin-axis interaction in triplet dimers. Initial estimates of the spin-axis coupling…
Coupled spin evolution and tunneling together with the relaxation and decoherence effects are studied for the double quantum dot formed in a semiconductor nanowire and driven by the periodic electric field. Such system represents a model of…
The classical drift diffusion (DD) model of spin transport treats spin relaxation via an empirical parameter known as the ``spin diffusion length''. According to this model, the ensemble averaged spin of electrons drifting and diffusing in…
A realistic pseudopotential model is introduced to investigate the phonon-induced spin relaxation of conduction electrons in bulk silicon. We find a surprisingly subtle interference of the Elliott and Yafet processes affecting the spin…
A longstanding goal of spintronics is to inject, coherently transport, and detect spins in a semiconductor nanowire where a SINGLE quantized subband is occupied at room temperature. Here, we report achieving this goal in 50-nm diameter InSb…