Related papers: Complementary-like Graphene Logic Gates Controlled…
The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…
We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…
Electrostatic gating is essential for defining and control of semiconducting devices. However, nano-fabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of…
The doping of graphene to tune its electronic structure is essential for its further use in carbon based electronics. Adapting strategies from classical silicon based semiconductor technology, we use the incorporation of heteroatoms in the…
One notable manifestation of the peculiar edge-localized states in zigzag graphene nanoribbons (zGNRs) is the p-type (n-type) characteristics of nitrogen (boron) edge-doped GNRs, and such behavior was so far considered to be exclusive for…
Doping is one of the most prominent techniques to alter properties of a given material. Herein, the influence of the electron- and hole-doping on the selected superconducting properties of graphene are considered. In details, the…
We investigate polyethylene imine and diazonium salts as stable, complementary dopants on graphene. Transport in graphene devices doped with these molecules exhibits asymmetry in electron and hole conductance. The conductance of one carrier…
By means of an envelope function analysis, we perform a numerical investigation of the conductance behavior of a graphene structure consisting of two regions (dots) connected to the entrance and exit leads through constrictions and…
In this letter, we demonstrate a non-volatile memory device in a graphene FET structure using ferroelectric gating. The binary information, i.e. "1" and "0", is represented by the high and low resistance states of the graphene working…
The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of…
Magnetic analogue of electronic gates are advantageous in many ways. There is no electron leakage, higher switching speed and more energy saving in a magnetic logic device compared to a semiconductor one. Recently, we proposed a magnetic…
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped…
Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes which causes a band gap to open up around…
Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag edged triangular antidots perform essential…
We present a general formulation to calculate the dynamic optical conductivity, beyond the linear response regime, of any electronic system whose quasiparticle dispersion is described by a two band model. Our phenomenological model is based…
We have measured a graphene double quantum dot device with multiple electrostatic gates that are used to enhance control to investigate it. At low temperatures the transport measurements reveal honeycomb charge stability diagrams which can…
The field of coherent electronics aims to advance electronic functionalities by utilizing quantum coherence. Here, we demonstrate a viable and versatile methodology for controlling electron dynamics optically in graphene nanoribbons. In…
Polymer field-effect transistors with 2D graphene electrodes are devices that merge the best of two worlds: on the one hand, the low-cost and processability of organic materials and, on the other hand, the chemical robustness, extreme…
Numerically solving the semiconductor Bloch equations within a phenomenological relaxation time approximation, we extract both the linear and nonlinear optical conductivities of doped graphene and gapped graphene under excitation by a laser…
It has been shown that the combining of the electrical effect on the exchange bias field with giant magneto-resistance effect of the graphene/ferromagnet hybrid structures reveals a new non-volatile magnetic random access memory device…