Related papers: Laterally proximized aluminum tunnel junctions
We propose altermagnet-superconductor junctions as a way to achieve a thermoelectric response in metals free of external or stray magnetic fields. We combine qualitative analysis in a simplified model with a more rigorous approach based on…
We have developed a technique to fabricate sub-micron, 0.6 um x 0.6 um Al-AlOx-Nb tunnel junctions using a standard e-beam resist, angle evaporation and double oxidation of the tunneling barrier, resulting in high quality niobium, as…
We demonstrate shadow evaporation-based fabrication of high-quality ultrasmall normal metal -- insulator -- superconductor tunnel junctions where the thickness of the superconducting electrode is not limited by the requirement of small…
Charging effects in mesoscopic junctions suppress the tunneling of electrons. In normal metal - superconductor systems they also suppress the proximity effect, thereby revealing the nature of the microscopic processes and of the ground…
The performance of many superconducting devices is degraded in presence of non-equilibrium quasiparticles in the superconducting part. One promising approach towards their evacuation is the use of normal-metal quasiparticle traps, where…
We demonstrate an original method -- based on controlled oxidation -- to create high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires. We show clean tunnel characteristics with a current…
Many nanoelectronic devices rely on thin dielectric barriers through which electrons tunnel. For instance, aluminium oxide barriers are used as Josephson junctions in superconducting electronics. The reproducibility and drift of circuit…
We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed…
We investigate the proximity effect in InAs nanowire (NW) junctions with superconducting contacts made of Al. The carrier density in InAs is tuned by means of the back gate voltage $V_g$. At high positive $V_g$ the devices feature transport…
We demonstrate a technique for creating high quality, large area tunnel junction barriers for normal-insulating- superconducting or superconducting-insulating-superconducting tunnel junctions. We use atomic layer depo- sition and an…
Micrometer-sized Al/AlO$_{x}$/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin ($\approx$ 1.5--2 nm thickness) insulating AlO$_{x}$ layer was grown on top of the Al base electrode by O$_{2}$ glow…
We have investigated the effect of a difference in the tunnelling resistances of the individual normal metal-insulator-superconductor (NIS) tunnel junctions in a double junction SINIS device, with particular emphasis on the impact on the…
We study the consequences of non-equilibrium heating and inverse proximity effect in normal metal - insulator - superconductor - insulator - normal metal (NISIN) junctions with a simple quasi-one-dimensional model. We especially focus on…
We report the development of superconducting tantalum nitride (TaN$_{x} $) normal metal-insulator-superconductor (NIS) tunnel junctions. For the insulating barrier, we used both AlO$_{x}$ and TaO$_{x}$ (Cu-AlO$_{x}$-Al-TaN$_{x} $ and…
Typical measurements of nanowire devices rely on end-to-end measurements to reveal mesoscopic phenomena such as quantized conductance or Coulomb blockade. However, creating nanoscale tunnel junctions allows one to directly measure other…
The anti-proximity effect, where the superconductivity in superconducting nanowires is suppressed or weakened when contacted by bulk superconducting electrodes, first revealed in arrays of Zn nanowires by tuning the electrodes from the…
We have recently shown that normal-metal/superconductor (N/S) bilayer TESs (superconducting Transition-Edge Sensors) exhibit weak-link behavior.1 Here we extend our understanding to include TESs with added noise-mitigating normal-metal…
We have successfully fabricated Cu/AlOx-Al/Nb normal-metal/insulator/superconductor tunnel junction devices with a high value of the superconducting gap (up to $\sim 1$ mV), using electron-beam lithography and angle evaporation techniques…
We present a set of experiments to optimize the performance of the noninvasive thermometer based on proximity superconductivity. Current through a standard tunnel junction between an aluminum superconductor and a copper electrode is…
We study from first principles the transport properties of Al/AlOx/Al tunnel junctions. On this basis, we analyze the reliability of two analytical models for the conductance, namely the trapezoid potential barrier model and a tight-binding…