Related papers: Electron g-Factor Anisotropy in Symmetric (110)-or…
We report a large g-factor tunability of a single hole spin in an InGaAs quantum dot via an electric field. The magnetic field lies in the in-plane direction x, the direction required for a coherent hole spin. The electrical field lies…
We study the role of anisotropy on the transport properties of composite fermions near Landau level filling factor $\nu=1/2$ in two-dimensional holes confined to a GaAs quantum well. By applying a parallel magnetic field, we tune the…
We analyze the interference between tunneling paths that occurs for a spin system with both fourth-order and second-order transverse anisotropy. Using an instanton approach, we find that as the strength of the second-order transverse…
The results of systematic experimental studies of quantum oscillations of resistivity, Hall coefficient and capacitance in GaAs and In$_x$Ga$_{1-x}$As quantum wells (QWs) with a simple electron spectrum and HgTe QWs with a complicated…
We consider stationary spin current in a (110)-oriented GaAs-based symmetric quantum well due to a nonlinear response to an external periodic electric field. The model assumed includes the Dresselhaus spin-orbit interaction and the random…
We present in this Letter the results from two high quality, low density GaAs quantum wells. In sample A of electron density n=5.0x10^10 cm^-2, anisotropic electronic transport behavior was observed at \nu=7/2 in the second Landau level. We…
We have studied the optical and electrical spectra from an n i p LED as a function of magnetic field. This sample incorporated three GaAs quantum wells in the intrinsic region. This device had excess n type doping and as a result. The…
A re-ordered valence band in GaN/AlGaN quantum wells with respect to GaN epilayers has been found as a result of the observation of an enhanced g-factor in magneto-luminescence spectra in fields up to 55 T. This has been caused by a…
The electron spin dynamics in (111)-oriented GaAs/AlGaAs quantum wells is studied by timeresolved photoluminescence spectroscopy. By applying an external field of 50 kV/cm a two-order of magnitude increase of the spin relaxation time can be…
We investigate the anisotropy of the optical properties of thin Fe films on GaAs(001) from first-principles calculations. Both intrinsic and magnetization-induced anisotropy are covered by studying the system in the presence of spin-orbit…
We utilize the kinetic spin Bloch equation approach to investigate the steady-state spin diffusion in $n$-type (111) GaAs quantum wells, where the in-plane components of the Dresselhaus spin-orbit coupling term and the Rashba term can be…
We find an unusual anisotropy of the inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells. The anisotropy depends on the orientation between the inplane field, $B_\parallel$, and current, $I$, relative to the…
When an electron or hole is in a conduction band of a crystal, it can be very different from 2, depending upon the crystalline anisotropy and the direction of the applied magnetic induction ${\bf B}$. In fact, it can even be 0! To…
Control of electron spin coherence via external fields is fundamental in spintronics. Its implementation demands a host material that accommodates the highly desirable but contrasting requirements of spin robustness to relaxation mechanisms…
We report on transport experiments through high-mobility gate-tunable undoped InSb QWs. Due to the elimination of any Si modulation doping, the gate-defined two-dimensional electron gases in the quantum wells display a significantly…
The high-frequency (ac) conductivity of a high quality modulation doped GeSi/Ge/GeSi single quantum well structure with hole density $p$=6$\times$10$^{11}$cm$^{-2}$ was measured by the surface acoustic wave (SAW) technique at frequencies of…
We present a numerical study of dephasing of electron spin ensembles in a diffusive quasi-one-dimensional GaAs wire due to the D'yakonov-Perel' spin-dephasing mechanism. For widths of the wire below the spin precession length and for equal…
We present a theoretical study of the anisotropy of the spin relaxation and decoherence in typical quantum wells with an arbitrary magnetic field. In such systems, the orientation of the magnetic field relative to the main crystallographic…
We study theoretically phonon-assisted spin relaxation of an electron confined in an elliptical quantum dot (QD) subjected to a tilted magnetic field. In the presence of both Rashba and Dresselhaus spin-orbit terms, the relaxation rate is…
We consider spin-lattice relaxation processes for electrons trapped in lateral Si quantum dots in a $[001]$ inversion layer. Such dots are characterized by strong confinement in the direction perpendicular to the surface and much weaker…