Related papers: Electron g-Factor Anisotropy in Symmetric (110)-or…
The results of the longitudinal and Hall magnetoresistivity measurements in the Shubnikov - de Haas oscillation regime for the HgCdTe/HgTe/HgCdTe heterostructures with a wide (20.3 nm) HgTe quantum well are presented. An anomalous phase…
Magnetoresistance data taken along $[\bar{2}33]$ and $[01\bar{1}]$ directions in a GaAs/AlGaAs two-dimensional hole sample with van der Pauw geometry exhibit significant anisotropy at half-integer filling factors. The anisotropy appears to…
The determination of Lande's g-factor and the damping constant is central to extracting crucial information about the spin-spin and spin-orbit interactions in magnetically ordered systems. In insulating compounds based on 3d elements, the…
The electron, hole, and exciton g-factors and diamagnetic coefficients have been calculated using envelope-function theory for cylindrical InAs/InP quantum dots in the presence of a magnetic field parallel to the dot symmetry axis. A clear…
Hole spin relaxation in $p$-type (111) GaAs quantum wells is investigated in the case with only the lowest hole subband, which is heavy-hole like in (111) GaAs/AlAs and light-hole like in (111) GaAs/InP quantum wells, being relevant. The…
Spin splitting of conduction electron states has been analyzed for all possible point symmetries of SiGe quantum well structures. A particular attention is paid to removal of spin degeneracy caused by the rotoinversion asymmetry of a (001)…
We report that the electron spin relaxation time, T1, in a GaAs quantum dot with a spin-1/2 ground state has a 180 degree periodicity in the orientation of the in-plane magnetic field. This periodicity has been predicted for circular dots…
We study the effects of external magnetic field on the properties of an ordered Heisenberg antiferromagnet with the Dzyaloshinskii-Moriya (DM) interaction. Using the spin-wave theory quantum correction to the energy, on-site magnetization,…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
We study two dimensional hole systems confined to GaAs quantum wells grown on the (311)A surface of GaAs substrates. Such samples exhibit an in-plane mobility anisotropy. At constant 2D hole density, we vary the symmetry of the quantum well…
It is demonstrated by SQUID magnetization measurements that (Ga,Mn)As films can exhibit rich characteristics of magnetic anisotropy depending not only to the epitaxial strain but being strongly influenced by the hole and Mn concentration,…
We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for…
In this letter, the first spin noise spectroscopy measurements in semiconductor systems of reduced effective dimensionality are reported. The non-demolition measurement technique gives access to the otherwise concealed intrinsic, low…
We study the spin dynamics in a high-mobility two-dimensional electron gas confined in a GaAs/AlGaAs quantum well. An unusual magnetic field dependence of the spin relaxation is found: as the magnetic field becomes stronger, the spin…
We present measurements on gate-defined double quantum dots in Ge-Si core-shell nanowires, which we tune to a regime with visible shell filling in both dots. We observe a Pauli spin blockade and can assign the measured leakage current at…
Two-dimensional (2D) electrons in an in-plane magnetic field become fully spin polarized above a field B_P, which we can determine from the in-plane magnetoresistance. We perform such measurements in modulation-doped AlAs electron systems,…
For photon-spin conversion, the Ge hole system in a strained GeSi/Ge quantum well with a diamond structure has attracted significant attention because of the potential for a high-performance spin qubit and optical transitions ranging in…
Experiments on high-quality GaAs (311)A two-dimensional holes at low temperatures reveal a remarkable dependence of the magnetoresistance, measured with an in-plane magnetic field ($B$), on the direction of $B$ relative to both the crystal…
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor…
W-band ({\nu} ca. 94 GHz) electron paramagnetic resonance (EPR) spectroscopy was used for a single-crystal study of a star-shaped Fe3Cr single-molecule magnet (SMM) with crystallographically imposed trigonal symmetry. The high resolution…