Related papers: Integer Quantum Hall Effect in Trilayer Graphene
We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous…
We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer,…
A breakdown of integer quantum Hall effect (IQHE) at strong disorder is studied numerically in a lattice model. We find a generic sequence by which the integer quantum Hall plateaus disappear: higher IQHE plateaus always vanish earlier than…
We present a supersymmetric description of the quantum Hall effect (QHE) in graphene. The noninteracting system is supersymmetric separately at the so-called K and K' points of the Brillouin zone corners. Its essential consequence is that…
Graphene properties can be manipulated by a periodic potential. Based on the tight-binding model, we study graphene under a one-dimensional (1D) modulated magnetic field which contains both a uniform and a staggered component. New chiral…
The edge states in the integer quantum Hall effect are known to be significantly affected by electrostatic interactions leading to the formation of compressible and incompressible strips at the boundaries of Hall bars. We show here, in a…
The conventional theory of the integer quantum Hall effect (IQHE) fails for irrational magnetic fields owing to the breakdown of magnetic translational symmetry. Here, based on the recently proposed incommensurate energy band (IEB) theory,…
We observe fractional quantum Hall effect (FQHE) at the even-denominator Landau level filling factor $\nu=1/2$ in two-dimensional hole systems confined to GaAs quantum wells of width 30 to 50 nm and having bilayer-like charge distributions.…
Recent successes in manufacturing of atomically thin graphite samples (graphene) have stimulated intense experimental and theoretical activity. The key feature of graphene is the massless Dirac type of low-energy electron excitations. This…
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We…
We studied the unusual Quantum Hall Effect (QHE) near the charge neutrality point (CNP) in high-mobility graphene sample for magnetic fields up to 18 T. We observe breakdown of the delocalized QHE transport and strong increase in…
We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)\nu ^{-1}$…
We report experimental observation of the reentrant integer quantum Hall effect in graphene, appearing in the N$=$2 Landau level. Similar to high-mobility GaAs/AlGaAs heterostructures, the effect is due to a competition between…
We study the quantum Hall effect (QHE) in the three-dimensional topological insulator HgTe, which features topological Dirac-type surface states in a bulk gap opened by strain. Despite the co-existence of multiple carrier subsystems, the…
The quantum anomalous Hall effect (QAHE) is a topological state of matter with a quantized Hall resistance. It has been observed in some two-dimensional insulating materials such as magnetic topological insulator films and twisted bilayer…
We report on magneto-transport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the twelve-fold degeneracy…
Low-energy electronic states in monolayer and bilayer graphenes present chiral charge carriers with unique and unusual properties of interest for electronic applications. Here, we report the magnetotransport measurements in the ABC-stacked…
We predict a quantum spin Hall effect (QSHE) in the ferromagnetic graphene under a magnetic field. Unlike the previous QSHE, this QSHE appears in the absence of any spin-orbit interaction, thus, arrived from a different physical origin. The…
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…
Metrological investigations of the quantum Hall effect (QHE) completed by transport measurements at low magnetic field are carried out in a-few-$\mu\mathrm{m}$-wide Hall bars made of monolayer (ML) or bilayer (BL) exfoliated graphene…