Related papers: Thickness-dependent bulk properties and weak anti-…
Nonlinear Hall effect (NLHE) offers a novel means of uncovering symmetry and topological properties in quantum materials, holding promise for exotic (opto)electronic applications such as microwave rectification and THz detection. The…
Topological insulators (TIs) are newly discovered states of matter with robust metallic surface states protected by the topological properties of the bulk wavefunctions. A quantum phase transition (QPT) from a TI to a conventional insulator…
We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2Se3 by utilizing a novel approach, namely non-volatile electrostatic gating via corona charging of electret polymers.…
Tensile strained bulk HgTe is a three-dimensional topological insulator. Because of the energetic position of its surface state Dirac points relative to its small bulk gap, the electronic properties of the relatively thin MBE-grown films…
Topological insulators are ideally represented as having an insulating bulk with topologically protected, spin-textured surface states. However, it is increasingly becoming clear that these surface transport channels can be accompanied by a…
Topologically protected surface states have garnered significant attention due to their robustness against perturbations and potential applications in optoelectronics. Bi2 Bi2Se3 is a topological semimetal composed of a 2D bismuthene sheet…
In this Letter we present scanning tunneling microscopy density-of-states measurements and electronic structure calculations of the topological insulator Bi2Se3. The measurements show significant background states in addition to the…
Topological insulators are guaranteed to support metallic surface states on an insulating bulk, and one should thus expect that the electronic transport in these materials is dominated by the surfaces states. Alas, due to the high remaining…
We report that the finite thickness of three-dimensional topological insulator (TI) thin films produces an observable magnetoresistance (MR) in phase coherent transport in parallel magnetic fields. The MR data of Bi2Se3 and (Bi,Sb)2Te3 thin…
We report on electric-field and temperature dependent transport measurements in exfoliated thin crystals of Bi$_{2}$Se$_{3}$ topological insulator. At low temperatures ($< 50$ K) and when the chemical potential lies inside the bulk gap, the…
We report the synthesis, structural characterization, and investigation of electrical transport, magnetic and specific heat properties of bulk semiconducting layered material Ta$_2$Ni$_3$Te$_5$. Ta$_2$Ni$_3$Te$_5$ crystallizes in the…
The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard…
In the ultra-thin regime, Bi2Te3 films feature two surfaces (with each surface being a two-dimensional Dirac-fermion system) with complicated spin textures and a tunneling term between them. We find in this regime that the quasiparticle…
The topological insulator Bi2Se3 shows a Raman scattering response related to topologically protected surface states amplified by a resonant interband transition. Most significantly this signal has a characteristic Lorentzian lineshape and…
Topological insulators possess a non-conductive bulk and present surface states, henceforth, they are electrically conductive along their boundaries. Bismuth selenide ($Bi_2Se_3$) is one of the most promising topological insulators.…
We use first-principles simulations to investigate the topological properties of Bi$_2$Se$_3$ thin films deposited on amorphous SiO2, Bi$_2$Se$_3$/a-SiO$_2$, which is a promising substrate for topological insulator (TI) based device…
Using a density functional based electronic structure method, we study the effect of perturbations on the surface state Dirac cone of a strong topological insulator Bi$_2$Se$_3$ from both the intrinsic and extrinsic sources. We consider…
Topological insulators (TIs) are new insulating materials with exotic surface states, where the motion of charge carriers is described by the Dirac equations and their spins are locked in a perpendicular direction to their momentum. Recent…
To date transport measurements of topological insulators have been dominated by the conductivity of the bulk, leading to substantial difficulties in resolving the properties of the surface. To this end, we use high magnetic field, rf- and…
We theoretically consider temperature and density-dependent electron-phonon interaction induced many-body effects in the two-dimensional (2D) metallic carriers confined on the surface of the 3D topological insulator (e.g. Bi$_2$Se$_3$). We…