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$\mathrm {^{151}Eu^{3+}}$-doped yttrium silicate ($\mathrm {^{151}Eu^{3+}:Y_2SiO_5}$ ) crystal is a unique material that possesses hyperfine states with coherence time up to 6 h. Many efforts have been devoted to the development of this…
Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to accelerate the modelling of PCMs, and yet it remains…
Predictions of relative stabilities of (competing) molecular crystals are of great technological relevance, most notably for the pharmaceutical industry. However, they present a long-standing challenge for modeling, as often minuscule free…
Scalable implementation of quantum networks and photonic processors require integrated photonic memories with high efficiency, yet current integrated systems have been limited to storage efficiencies below 27.8%. Here, we demonstrate highly…
Multi-component chalcogenides, such as quasi-binary GeTe-Sb$_{2}$Te$_{3}$ alloys, are widely used in optical data storage media in the form of rewritable optical discs. Ge$_{2}$Sb$_{2}$Te$_{5}$ (GST) in particular has proven to be one of…
Development of memory devices with ultimate performance has played a key role in innovation of modern electronics. As a mainstream technology nonvolatile memory devices have manifested high capacity and mechanical reliability, however…
Long term aging is studied on several families of chalcogenide glasses including the Ge-Se, As-Se, Ge-P-Se and Ge-As-Se systems. Special attention is given to the As-Se binary, a system that displays a rich variety of aging behavior…
2D materials are emerging as promising nanomaterials for applications in energy storage and catalysis. In the wet chemical synthesis of MXenes, these 2D transition metal carbides and nitrides are terminated with a variety of functional…
Non-volatile Memory (NVM) technologies present a promising alternative to traditional volatile memories such as SRAM and DRAM. Due to the limited availability of real NVM devices, simulators play a crucial role in architectural exploration…
This article features extended summaries and retrospectives of some of the recent research done by our group, SAFARI, on (1) understanding, characterizing, and modeling various critical properties of modern DRAM and NAND flash memory, the…
We present a stochastic simulator for polycrystalline phase-change materials capable of spatio-temporal modelling of complex anneals. This is based on consideration of bulk and surface energies to generate rates of growth and decay of…
Due to their unique optical and electronic functionalities, chalcogenide glasses are materials of choice for numerous microelectronic and photonic devices. However, to extend the range of compositions and applications, profound knowledge…
Bose-Einstein condensates are a promising platform for optical quantum memories, but suffer from several decoherence mechanisms, leading to short memory lifetimes. While some of these decoherence effects can be mitigated by conventional…
Stimulated by recent experimental results, we simulate ``temperature''-cycling experiments in a model for the compaction of granular media. We report on the existence of two types of memory effects: short-term dependence on the history of…
We present a combined experimental and theoretical study of memory effects in vibration-induced compaction of granular materials. In particular, the response of the system to an abrupt change in shaking intensity is measured. At short times…
Functionally Graded Material (FGM) is a type of advanced material consisting of two (or more) distinct substances with a constantly changing composition profile. FGM technologies have moved from their traditional use to advanced micro and…
Second Harmonic Generation (SHG) of single-layer monochalcogenides, such as GaSe and InSe, has been recently reported [2D Mater. 5 (2018) 025019; J. Am. Chem. Soc. 2015, 137, 79947997] to be extremely strong with respect to bulk and…
In the search for phase change materials (PCM) that may rival traditional random access memory, a complete understanding of the amorphous to crystalline phase transition is required. For the well-known Ge2Sb2Te5 (GST) and GeTe (GT)…
We present the first demonstration of an integrated photonic phase-change memory using GeSbTe-225 on silicon-on-insulator and demonstrate reliable multilevel operation with a single programming pulse. We also compare our results on silicon…
Boosted by the relentless increase of available computational resources, high-throughput calculations based on first principles methods have become a powerful tool to screen a huge range of materials. The backbone of these studies are…