Related papers: The efficient spin injector scheme based on Heusle…
Helical metals realized at the surfaces of topological insulators have recently attracted wide attention due to their potential applications in spintronics. In this paper we propose to realize helical metals through the application of THz…
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-S Schottky barrier with an ultrathin heavily doped…
The large spin orbit coupling in topological insulators results in helical spin-textured Dirac surface states that are attractive for topological spintronics. These states generate an efficient spin-orbit torque on proximal magnetic moments…
Hybrid superconductor-semiconductor heterostructures are promising platforms for realizing topological superconductors and exploring Majorana bound states physics. Motivated by recent experimental progress, we theoretically study how…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
The rapidly expanding research in Spintronics, the electronics utilizing the electron spin instead of its charge, is driven by the very interesting potential applications. The actual task is to develop principles for the spin manipulations…
The electronic properties of interfaces between two different solids can differ strikingly from those of the constituent materials. For instance, metallic conductivity, and even superconductivity, have been recently discovered at interfaces…
We present a combined experimental and theoretical work that investigates the magnetic proximity effect at a ferromagnetic-insulator - superconductor (FI-S) interface. The simulation is based on the boundary condition for diffusive…
The Heusler alloy is used as an electrode of magnetic tunneling junctions. The junctions are deposited by magnetron dc sputtering using shadow mask techniques with AlO_{x} as a barrier and cobalt as counter electrode. Measurements of the…
We provide an analytic study of the dynamics of semiconductor lasers with injection (pump) of spin-polarized electrons, previously considered in the steady-state regime. Using complementary approaches of quasi-static and small signal…
Half-metals, featuring ideal 100\% spin polarization, are widely regarded as key materials for spintronic and quantum technologies; however, the half-metallic state is intrinsically fragile, as it relies on a delicate balance of exchange…
First-principles density functional calculations demonstrate that a spin-polarized two-dimensional conducting state can be realized at the interface between two non-magnetic band insulators. The (001) surface of the diamagnetic insulator…
The high efficiency of a tunnel magnetic transistor as a source of spin-polarized electrons has been proven recently [X. Jiang {\it et al.}, Phys. Rev. Lett. {\bf 90}, 256603 (2003)]. A concept of this device based on an active group of hot…
It is recently noted that in certain centrosymmetric compounds, spin-orbit interaction couples each local sector that lacks inversion symmetry and thus leads to visible spin polarization effects in the real space, dubbed as 'hidden spin…
Method for determining the magnetic susceptibility in the high doped semiconductors is considered. A procedure that is based on double integration of the positive part of the derivative of the absorption line having a Dyson shape and takes…
We report the emergence of adsorption-induced magnetism from heterohelicene molecules on a non-magnetic Cu(100) surface. Spin-polarized low-energy electron microscopy (SP-LEEM) measurements reveal spin-dependent electron reflectivity for…
Ultrashort spin current pulses have a great potential of becoming the carriers of information in future ultrafast spintronics. They present the outstanding property of an extremely compressed time profile, which can allow for the building…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
We present an efficient scheme which couples any designated pair of spins in heteronuclear spin systems. The scheme is based on the existence of Hadamard matrices. For a system of $n$ spins with pairwise coupling, the scheme concatenates…
Employing {\it ab initio} electronic structure calculations we extensively study ternary Heusler compounds having the chemical formula X$_2$X$^\prime$Z, where X = Mn, Fe or Co; Z = Al or Si; and X$^\prime$ changes along the row of 4$d$…