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Half-metallic ferromagnets (HMF) are on one of the most promising materials in the field of spintronics due to their unique band structure consisting of one spin sub-band having metallic characteristics along with another sub-band with…

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near…

Materials Science · Physics 2009-11-10 A. M. Bratkovsky , V. V. Osipov

Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi…

Applied Physics · Physics 2023-09-19 Joydipto Bhattacharya , Ashima Rawat , Ranjit Pati , Aparna Chakrabarti , Ravindra Pandey

Magnetic insulators are promising materials for the development of energy-efficient spintronics. Unlike metallic counterparts, the magnetic insulators are characterized by imaginary part of the interfacial spin mixing conductance as well in…

Mesoscale and Nanoscale Physics · Physics 2020-11-24 Kuntal Roy

Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and…

Materials Science · Physics 2020-01-22 T. Aull , E. Şaşıoğlu , I. V. Maznichenko , S. Ostanin , A. Ernst , I. Mertig , I. Galanakis

Opposite to the common idea of a magnetic order requirement to obtain spin current propagation, materials with no magnetic ordering have also been revealed to be efficient spin conductors. In this work, we investigate the spin current…

Superconductivity · Physics 2022-01-11 Vinícius S. U. A. Vargas , Antônio R. Moura

Following demands for materials with peculiar transport properties, e.g. in magnetoelectronics or thermoelectrics, there is a need for materials modeling at the quantum-mechanical level. We combine density-functional with various…

Materials Science · Physics 2010-11-02 Peter Kratzer , Vladimir M. Fomin , B. Hülsen , M. Scheffler

We study zigzag interfaces between insulating compounds that are isostructural to graphene, specifically II-VI, III-V and IV-IV two-dimensional (2D) honeycomb insulators. We show that these one-dimensional interfaces are polar, with a net…

Mesoscale and Nanoscale Physics · Physics 2015-06-11 N. C. Bristowe , Massimiliano Stengel , P. B. Littlewood , Emilio Artacho , J. M. Pruneda

The identification of materials supporting complex, tunable magnetic order at ambient temperatures is foundational to the development of new magnetic device architectures. We report the design of Mn2XY tetragonal inverse Heusler alloys that…

Materials Science · Physics 2021-09-24 Daniil A. Kitchaev , Anton Van der Ven

We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the…

Mesoscale and Nanoscale Physics · Physics 2019-10-02 X. P. Zhang , F. S. Bergeret , V. N. Golovach

Quantum spin networks having engineered geometries and interactions are eagerly pursued for quantum simulation and access to emergent quantum phenomena such as spin liquids. Spin-1/2 centers are particularly desirable because they readily…

We investigate the role of exchange bridges in molecular magnets. We explore their effects on the distribution of the valence electrons and their contribution to the exchange processes. The present study is focused on a spin-half dimer with…

Atomic and Molecular Clusters · Physics 2020-10-12 M. Georgiev , H. Chamati

We study IrCrMnZ (Z=Al, Ga, Si, Ge) systems using first-principles calculations from the perspective of their application as the electrode materials of MgO-based MTJs. These materials have highly spin-polarized conduction electrons with…

Materials Science · Physics 2021-11-30 Tufan Roy , Masahito Tsujikawa , Masafumi Shirai

We report on the spin-polarized electron injection through an Fe(100)/InAs(100) junction. The circularly polarized electroluminescence of injected electrons from epitaxially grown Fe thin film into InAs(100) in an external magnetic field is…

A theory of spin injection across a ballistic ferromagnet-semiconductor-ferromagnet junction is developed for the Boltzmann regime. Spin injection coefficient $\gamma$ is suppressed by the Sharvin resistance of the semiconductor…

Mesoscale and Nanoscale Physics · Physics 2009-11-07 Vladimir Ya. Kravchenko , Emmanuel I. Rashba

A lateral interface connecting two regions with different strengths of the Bychkov-Rashba spin-orbit interaction can be used as a spin polarizer of electrons in two dimensional semiconductor heterostructures. [Khodas \emph{et al.}, Phys.…

Mesoscale and Nanoscale Physics · Physics 2017-05-16 A. Shekhter , M. Khodas , A. M. Finkel'stein

Barrier planes described by the Ionic Hubbard model and sandwiched between metallic planes on both sides are studied using unrestricted Hartree Fock. For zero onsite correlation, the presence of the metallic interface generates an…

Strongly Correlated Electrons · Physics 2011-04-20 Tribikram Gupta , Sanjay Gupta

In this paper, we examine the properties of spin-polarized interfaces consisting of single-molecule magnet bis(cyclopentadienyl)cobalt(II) (cobaltocene) and two-dimensional magnetic materials, semiconducting CrI$_3$ and metallic…

Materials Science · Physics 2026-03-23 Nikola Machacova , Biplab Sanyal

Using the full potential linearised augmented planewave method we study the electronic and magnetic properties of the (001) and (111) surfaces of the half-metallic Heusler alloy NiMnSb from first-principles. We take into account all…

Materials Science · Physics 2009-11-11 M Lezaic , I Galanakis , G Bihlmayer , S Blugel

We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…

Materials Science · Physics 2011-10-05 M. Tran , H. Jaffres , C. Deranlot , J. -M. George , A. Fert , A. Miard , A. Lemaitre