Related papers: Quantum spin Hall effect induced by non-magnetic a…
We propose a quantum electronic device based on strained graphene nanoribbon. Mechanical strain, internal exchange field and spin-orbit couplings (SOCs) have been exploited as principle parameters to tune physical properties of the device.…
We consider the influence of an external periodic potential on the fractional quantum Hall effect of two-dimensional interacting electron systems. For many electrons on a torus, we find that the splitting of incompressible ground state…
The quantum anomalous Hall (QAH) effect holds fundamental importance in topological physics and technological promise for electronics. It is generally believed that the QAH effect can only be realized in insulators. In this Letter, we…
The inverted band structure discovered in InAs/GaSb quantum well (QW) is found to host the topological quantum spin Hall (QSH) states. A QSH insulator hosts counterpropagating spin-polarized edge states that are protected by the…
We predict a new class of quantum Hall phenomena in completely neutral systems, demonstrating that the interplay between radial electric fields and dipole moments induces exact $e^2/h$ quantization without the need for Landau levels or…
Ferromagnetic topological insulators in the quantum anomalous Hall (QAH) regime host chiral, dissipationless edge states whose propagation direction is determined by the internal magnetization. Under suitable conditions, a strong electrical…
Recently the Quantum Spin Hall effect (QSH) was theoretically predicted and experimentally realized in a quantum wells based on binary semiconductor HgTe[1-3]. QSH state and topological insulators are the new states of quantum matter…
Doping a topological insulator (TI) film with transition metal ions can break its time-reversal symmetry and lead to the realization of the quantum anomalous Hall (QAH) effect. Prior studies have shown that the longitudinal resistance of…
Spin Hall effect can be induced both by the extrinsic impurity scattering and by the intrinsic spin-orbit coupling in the electronic structure. The HgTe/CdTe quantum well has a quantum phase transition where the electronic structure changes…
Topological phases of electrons such as topological insulators and quantum Hall states typically require strong spin-orbit coupling or magnetic fields. In this study, we consider an electron system coupled to a spin system, where electrons…
We propose a multiterminal nanostructure for electrical probing of the quantum spin Hall effect (QSHE) in two-dimensional (2D) topological insulators. The device consists of a ferromagnetic (FM) island with precessing magnetization that…
Quantum spin Hall (QSH) insulators are two-dimensional electronic materials that have a bulk band gap like an ordinary insulator but have topologically protected pairs of edge modes of opposite chiralities. To date, experimental studies…
We measured the magnetoresistance of bilayer quantum Hall (QH) effects at the fractional filling factor $\nu =2/3$ by changing the total electron density and the density difference between two layers. Three different QH states were…
The quantum kicked rotator is a periodically driven dynamical system with a metal-insulator transition. We extend the model so that it includes phase transitions between a metal and a topological insulator, in the universality class of the…
We propose an approach based on a generalized quantum mechanics to deal with the basic features of the intrinsic spin Hall effect. This can be done by considering two decoupled harmonic oscillators on the noncommutative plane and evaluating…
We generalize the topological phase diagram of magnetic topological insulator (TI) thin films in an extended parameter space comprising out-of-plane (OP) and in-plane (IP) exchange fields in the presence of structural inversion asymmetry…
We present a theoretical realization of quantum spin and quantum valley Hall effects in silicene. We show that combination of an electric field and intrinsic spin-orbit interaction leads to quantum phase transitions at the charge neutrality…
Topologically nontrivial band structure of a material may give rise to special states that are confined to the material's boundary and protected against disorder and scattering. Quantum spin Hall effect (QSHE) is a paradigmatic example of…
The quantum spin Hall effect (QSHE), a hallmark of topological insulators, enables dissipationless, spin-polarized edge transport and has been predicted in various two-dimensional materials. However, challenges such as limited scalability,…
Quantum Hall states can be characterized by their chiral edge modes. Upon softening the edge potential, the edge has long been known to undergo spontaneous reconstruction driven by charging effects. In this paper we demonstrate a…