Related papers: Digital logic using 3-terminal spin transfer torqu…

Here we propose four-terminal molecular devices as functional logic gates (AND, NOR and XOR, respectively). Such devices are composed of single organic molecule connected to gold electrodes and located in between gate terminals.…

Spin-orbit torque and spin-transfer torque are leading the pathway to the future of spintronic memories. However, both of the mechanisms are suffering from intrinsic limitations. In particular, an external magnetic field is required for…

Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…

In this work we propose a ratchet effect which provides a general means of performing clocked logic operations on discrete particles, such as single electrons or vortices. The states are propagated through the device by the use of an…

Nanomechanical systems have been proposed as an alternative computing platform for high radiation environments, where semiconductor electronics traditionally fail, as well as to allow improved gate densities and energy consumption. While…

Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on…

We report a resistance based threshold logic family useful for mimicking brain like large variable logic functions in VLSI. A universal Boolean logic cell based on an analog resistive divider and threshold logic circuit is presented. The…

In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed comparison between the SHE-MTJ-based C-LUT and Spin Transfer…

Electronic circuits can be separated into two groups, digital and analog circuits. Analog circuits operate on analog quantities that are continuous in value, whereas digital circuits operate on digital quantities that are discrete in value…

Progress in the last two decades has effectively integrated spintronics and nanomagnetics into a single field, creating a new class of spin-based devices that are now being used both to Read (R) information from magnets and to Write (W)…

Based on electron spins in semiconductor quantum dots as qubits, a new quantum controlled-NOT(CNOT) gate is constructed in solid nanostructure without resorting to spin-spin interactions. Single electron tunneling technology and coherent…

Electronic logic gates are the basic building blocks of every computing and micro controlling system. Logic gates are made of switches, such as diodes and transistors. Ion-selective, ionic switches may emulate electronic switches [1-8]. If…

We report a giant spin Hall effect (SHE) in {\beta}-Ta that generates spin currents intense enough to induce efficient spin-transfer-torque switching of ferromagnets, thereby providing a new approach for controlling magnetic devices that…

In this paper, we present a general reconfigurable multiple-valued logic circuit. The proposed architecture is based on threshold logic gate and is compatible with binary logic, which allows a designer to easily integrate multiple valued…

Integrating semiconducting and magnetic materials could combine transistor-like operation with nonvolatility and enable architectures such as logic-in-memory. Here, we employ correlated electrical transport and scanning nitrogen-vacancy…

Spin torque nano-oscillators (STNOs) hold encouraging promise for nanoscale microwave generators, modulators, and new types of intelligent computing. The nonlinearity, describing the current-induced tunability of oscillating frequency, is a…

As a potential revolutionary topic in future information processing, mechanical computing has gained tremendous attention for replacing or supplementing conventional electronics vulnerable to power outages, security attacks, and harsh…

We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent…

Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…

Spin transfer torque nano-oscillators are potential candidates for replacing the traditional inductor based voltage controlled oscillators in modern communication devices. Typical oscillator designs are based on trilayer magnetic tunnel…