Related papers: Strain-driven light polarization switching in deep…
Using the mechano-optical stress sensor technique, we observe a counter-intuitive reduction of the compressive stress when InAs is deposited on GaAs (001) during growth of quantum posts. Through modelling of the strain fields, we find that…
Magnetized neutron stars power at least some ultra-luminous X-ray sources. The accretion flow in these cases is interrupted at the magnetospheric radius and then reaches the surface of a neutron star following magnetic field lines.…
We study the interplay between a uniaxial strain and the topology of the Haldane and the modified Haldane models which, respectively, exhibit chiral and antichiral edge modes. The latter were, recently, predicted by Colom\'es and Franz…
Deep ultraviolet (UV) optical emission below 250 nm (~5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks…
The electron-hole exchange interaction is a fundamental mechanism that drives valley depolarization via intervalley exciton hopping in semiconductor multi-valley systems. Here, we report polarization-resolved photoluminescence spectroscopy…
Transition-metal dichalcogenides (TMDs) host tightly bound quasi-particles called excitons. Based on spin and momentum selection rules, these excitons can be either optically bright or dark. In tungsten-based TMDs, momentum-forbidden dark…
The complex interplay of charge, spin, orbital, and lattice degrees of freedom governs emergent phases in quantum materials, making strain a powerful control parameter. Recent advances in free-standing layer techniques have enabled extreme…
We consider a method for neutron residual strain/stress analysis combining features of transmission strain tomography (e.g. through Braggs edge imaging) and neutron diffraction techniques. Analogous to transmission strain tomography, our…
For highly divergent emission of broad-area vertical-cavity surface-emitting lasers (VCSELs) a rotation of the polarization direction by up to 90 degrees occurs when the pump rate approaches the lasing threshold. Well below threshold the…
Contrary to the conventional empirical law, band gap of dilute nitride semiconductors decreases with nitrogen concentration. In spite of a number of investigations, origin of this "large band gap bowing", is still under debate. In order to…
Localized residual stress and elastic strain concentrations in microelectronic devices often affect the electronic performance, resistance to thermomechanical damage, and, likely, radiation tolerance. A primary challenge for…
Recent progress on the signatures of pressure-induced high temperature superconductivity in Ruddlesden Popper (RP) nickelates (Lan+1NinO3n+1) has attracted growing interest in both theoretical calculations and experimental efforts. The…
We report on the demonstration of the first axial AlInN ultraviolet core-shell nanowire light-emitting diodes with highly stable emission in the UV wavelength range. During the epitaxial growth of AlInN layer, an AlInN shell is…
We studied the effect of external pressure on the optical response of the nodal-line semimetal candidate ZrSiTe by reflectivity measurements. At pressures of a few GPa, the reflectivity, optical conductivity, and loss function are strongly…
We study the effects that the diffusion of the cosmic rays in the magnetic field of the Local Supercluster can have on the spectrum of a nearby extragalactic source at ultrahigh energies. We find that the strong enhancement of the flux…
Study of photonic spin-orbital interactions, which involves control of the propagation and spatial distributions of light with the polarization of electromagnetic fields, is not only important at the fundamental level but also has…
The integration of ferroelectric nitride thin films such as Al1-xScxN onto GaN templates could enable enhanced functionality in novel high-power transistors and memory devices. This requires a detailed understanding of the ferroelectric…
Germanium is a strong candidate as a laser source for silicon photonics. It is widely accepted that the band structure of germanium can be altered by tensile strain so as to reduce the energy difference between its direct and indirect band…
Correlated electron systems often show strong bosonic fluctuations, e.g., of antiferromagnetic nature, around a large wave vector such as $\mathbf{q}=(\pi,\pi\ldots)$. These fluctuations can give rise to vertex corrections to the optical…
We study the direction- and wavelength-dependent polarization anisotropy in light scattering at the air-photonic crystal interface as a function of angle of incidence for TE and TM polarized light. This is done using optical reflectivity…