Related papers: Charge inhomogeneities and transport in semiconduc…
Quantitative differences of Lagrange multipliers between standard Fermi-Dirac statistics (FDS) and Ionization energy ($E_I$) based FDS (iFDS) are analyzed in detail to obtain reasonably accurate interpretations without violating the…
This work examines the influence of thickness on the electrical transport properties of mechanically exfoliated two-dimensional SnSe$_2$ nanosheets, derived from the bulk single crystal. Contrary to conventional trend observed in…
We report disorder-mediated first-order linear and higher-order nonlinear (magneto-)transport of Ta$_2$NiSe$_7$ (TNS) in the charge-density-wave (CDW) regime. CDW transition temperature ($T_{CDW}$) and carrier density are proportional and…
We present a detailed study, within the mean-field approximation, of an impurity band model for III-V diluted magnetic semiconductors. Such a model should be relevant at low carrier densities, below and near the metal-insulator transition.…
We study charge transport in a monolayer molybdenum disulfide nanoflake over a wide range of carrier density, temperature, and electric bias. We find that the transport is best described by a percolating picture in which the disorder breaks…
The transport properties of diluted magnetic semiconductors (DMS) are calculated using dynamical mean field theory (DMFT) and Boltzmann transport theory. Within DMFT we study the density of states and the dc-resistivity, which are strongly…
We have studied the effects of Mn concentration on the ballistic spin-polarized transport through diluted magnetic semiconductor heterostructures with a single paramagnetic layer. Using a fitted function for zero-field conduction band…
Understanding heat transport in low-dimensional and nano-architectured materials remains a central challenge in nonequilibrium statistical physics due to persistent deviations from Fourier's law. These deviations are driven by…
We investigate the spin-polarized transport of GaMnAs nanolayers in which a ferromagnetic order exists below a certain transition temperature. Our calculation for the self-averaged resistivity takes into account the existence of an impurity…
The ruthenium content of half-metallic Mn$_2$Ru$_x$Ga thin films, with a biaxially-strained inverse Heusler structure, controls the ferrimagnetism that determines their magnetic and electronic properties. An extensive study of…
We consider theoretically effects of random charged impurity disorder on the {\it quality} of high-mobility two dimensional (2D) semiconductor structures, explicitly demonstrating that the sample mobility is not necessarily a reliable or…
In the last six years, Indium selenide (InSe) has appeared as a new van der Waals heterostructure platform which has been extensively studied due to its unique electronic and optical properties. Such as transition metal dichalcogenides…
The presence of localized spins exerts a strong influence on quantum localization in doped semiconductors. At the same time carrier-mediated interactions between the localized spins are modified or even halted by carriers' localization. The…
We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is…
We study the influence of the non-homogeneity of a magnetization field on the behaviour of interacting electrons in a quantum dot. In particular we investigate the magnetotransport properties when the dot is weakly coupled to two…
Influence of disorder on the ferromagnetic phase transition in diluted (III,Mn)V semiconductors is investigated analytically. The regime of small disorder is addressed, and the enhancement of the critical temperature by disorder is found…
Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties…
We report on electronic transport measurements of electrostatically gated nano-devices of the semimetal WTe\textsubscript{2}. High mobility metallic behavior is achieved in the 2D limit by encapsulating thin flakes in an inert atmosphere.…
This work explores a nontrivial temperature behavior of the carriers concentration, which governs graphene channel conductance in the nano-structure "graphene channel on ferroelectric substrate" that is a basic element for FETs in…
Carrier density is one of the key controlling factors of material properties, particularly in controlling the essential correlations in strongly correlated materials. Typically, carrier density is externally tuned by doping or gating and…