Related papers: Trajectory Codes for Flash Memory
The current flash memory technology focuses on the cost minimization of its static storage capacity. However, the resulting approach supports a relatively small number of program-erase cycles. This technology is effective for consumer…
Flash memory is a non-volatile computer memory comprising blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by erasing…
This paper constructs WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems in flash memory. We consider a rewriting model that is of practical interest to flash applications where…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell is implemented as either NAND or NOR floating gate. NAND flash is currently the most widely used type of flash memory. In a NAND flash memory,…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different values or levels. While increasing the cell level is easy, reducing the level of a cell can be accomplished only by…
Recently, flash memories have become a competitive solution for mass storage. The flash memories have rather different properties compared with the rotary hard drives. That is, the writing of flash memories is constrained, and flash…
We consider rank modulation codes for flash memories that allow for handling arbitrary charge-drop errors. Unlike classical rank modulation codes used for correcting errors that manifest themselves as swaps of two adjacently ranked…
Flash memory is a write-once medium in which reprogramming cells requires first erasing the block that contains them. The lifetime of the flash is a function of the number of block erasures and can be as small as several thousands. To…
A rewriting code construction for flash memories based upon lattices is described. The values stored in flash cells correspond to lattice points. This construction encodes information to lattice points in such a way that data can be written…
In data storage and data transmission, certain patterns are more likely to be subject to error when written (transmitted) onto the media. In magnetic recording systems with binary data and bipolar non-return-to-zero signaling, patterns that…
The aggressive scaling down of flash memories has threatened data reliability since the scaling down of cell sizes gives rise to more serious degradation mechanisms such as cell-to-cell interference and lateral charge spreading. The effect…
Data shaping is a coding technique that has been proposed to increase the lifetime of flash memory devices. Several data shaping codes have been described in recent work, including endurance codes and direct shaping codes for structured…
The read channel of a Flash memory cell degrades after repetitive program and erase (P/E) operations. This degradation is often modeled as a function of the number of P/E cycles. In contrast, this paper models the degradation as a function…
In this paper, we propose a construction of non-binary WOM (Write-Once-Memory) codes for WOM storages such as flash memories. The WOM codes discussed in this paper are fixed rate WOM codes where messages in a fixed alphabet of size $M$ can…
We consider the local rank-modulation scheme in which a sliding window going over a sequence of real-valued variables induces a sequence of permutations. The local rank-modulation, as a generalization of the rank-modulation scheme, has been…
Flash memory is a non-volatile computer memory comprised of blocks of cells, wherein each cell can take on q different levels corresponding to the number of electrons it contains. Increasing the cell level is easy; however, reducing a cell…
In this work, we study a recently proposed direct shaping code for flash memory. This rate-1 code is designed to reduce the wear for SLC (one bit per cell) flash by minimizing the average fraction of programmed cells when storing structured…
This paper investigates the design and application of write-once memory (WOM) codes for flash memory storage. Using ideas from Merkx ('84), we present a construction of WOM codes based on finite Euclidean geometries over $\mathbb{F}_2$.…
The future of main memory appears to lie in the direction of new non-volatile memory technologies that provide strong capacity-to-performance ratios, but have write operations that are much more expensive than reads in terms of energy,…
Flash memories intended for SSD and mobile applications need to provide high random I/O performance. This requires using efficient schemes for reading small chunks of data (e.g. 0.5KB - 4KB) from random addresses. Furthermore, in order to…