A rewriting code construction for flash memories based upon lattices is described. The values stored in flash cells correspond to lattice points. This construction encodes information to lattice points in such a way that data can be written to the memory multiple times without decreasing the cell values. The construction partitions the flash memory's cubic signal space into blocks. The minimum number of writes is shown to be linear in one of the code parameters. An example using the E8 lattice is given, with numerical results.
Cite
@article{arxiv.1007.1819,
title = {Rewritable Codes for Flash Memories Based Upon Lattices, and an Example Using the E8 Lattice},
author = {Brian M. Kurkoski},
journal= {arXiv preprint arXiv:1007.1819},
year = {2010}
}