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The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and…
Electric field effects in ferromagnetic/oxide dielectric structures provide a new route to control domain wall (DW) dynamics with low power dissipation. However, electric field effects on DW velocities have only been observed so far in the…
Control of magnetic domain wall motion by electric fields has recently attracted scientific attention because of its potential for magnetic logic and memory devices. Here, we report on a new driving mechanism that allows for magnetic domain…
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic…
Ferroelectric $\mathrm{HfO}_2$ has attracted extensive research interest for its applications in AI era. The domain walls play a crucial role in phase structure stabilization and polarization switching of ferroelectric $\mathrm{HfO}_2$,…
We study the equilibrium properties of a ferromagnetic insulator/superconductor structure near a magnetic domain wall. We show how the domain wall size is affected by the superconductivity in such structures. Moreover, we calculate several…
Ferroelectric domain walls are nanoscale objects that can be created, positioned, and erased on demand. They often embody functional properties that are distinct from the surrounding bulk material. Enhanced conductivity, for instance, is…
Ultra-dense domain walls are increasingly important for many devices but their microscopic properties are so far not fully understood. Here we use molecular dynamic simulations to study the domain wall stability in the prototypical…
Transition metal oxides hold great potential for the development of new device paradigms because of the field-tunable functionalities driven by their strong electronic correlations, combined with their earth abundance and environmental…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
We investigated the time-dependent domain wall motion of epitaxial PbZr0.2Ti0.8O3 capacitors 100 nm-thick using modified piezoresponse force microscopy (PFM). We obtained successive domain evolution images reliably by combining the PFM with…
We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values…
Ferroelectric domains are mesoscale structures that mediate between synchronized atomic-scale ion displacements and switchable macroscopic polarization. Here, we evaluated the randomness of the domain distribution at the onset of…
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical…
We show how the periodicity of 180^{o} domains as a function of crystal thickness scales with the thickness of the domain walls both for ferroelectric and for ferromagnetic materials. We derive an analytical expression for the universal…
The depolarization fields set up to due to uncompensated surface charges in a ferroelectric thin film can suppress the ferroelectric phase below a critical size. Recent experiments show that 180 degree domain structures can help to…
There is growing evidence that domain walls in ferroics can possess emergent properties that are absent in bulk materials. For example, 180 domain walls in the ferroelectric-antiferromagnetic BiFeO3 are particularly interesting because they…
Recent interests towards novel functionalities arising at domain walls of ferroic materials naturally call for a microscopic understanding. To this end, first-principles calculations have been performed in order to provide solid evidence of…
Recent works suggest that the surface chemistry, in particular, the presence of oxygen vacancies can affect the polarization in a ferroelectric material. This should, in turn, influence the domain ordering driven by the need to screen the…
While negative capacitance has been demonstrated in ferroelectric-dielectric heterostructures in the form of capacitance enhancement, all experimental evidence, to date, suggests the existence of domains therein. Here, we address the…