Related papers: Memory-bit selective recording in vortex-core cros…
Quantum random access memory (QRAM) promises simultaneous data queries at multiple memory locations, with data retrieved in coherent superpositions, essential for achieving quantum speedup in many quantum algorithms. We introduce a…
More-versatile memory is strongly desired for end-users to protect their information in the information era. In particular, bit-level switchable memory, from rewritable to read-only function, allows end-users to prevent any important data…
Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…
Oblivious RAM (ORAM) is a provable secure primitive to prevent access pattern leakage on the memory bus. It serves as the intermediate layer between the trusted on-chip components and the untrusted external memory systems to modulate the…
Silicon-based Static Random Access Memories (SRAM) and digital Boolean logic have been the workhorse of the state-of-art computing platforms. Despite tremendous strides in scaling the ubiquitous metal-oxide-semiconductor transistor, the…
Resistance Random Access Memory (RRAMTM) device, with its electrically induced nanoscale resistive switching capacity, has been gaining considerable attention as future non-volatile memory device. Here, we propose a mechanism of switching…
Quantum random access memory (QRAM) enables efficient classical data access for quantum computers -- a prerequisite for many quantum algorithms to achieve quantum speedup. Despite various proposals, the experimental realization of QRAM…
Conventional low-power static random access memories (SRAMs) reduce read energy by decreasing the bit-line voltage swings uniformly across the bit-line columns. This is because the read energy is proportional to the bit-line swings. On the…
Understanding the fundamental dynamics of topological vortex and antivortex naturally formed in micro/nanoscale ferromagnetic building blocks under external perturbations is crucial to magnetic vortex based information processing and…
How spiking neuronal networks encode memories in their different time and spatial scales constitute a fundamental topic in neuroscience and neuro-inspired engineering. Much attention has been paid to large networks and long-term memory, for…
We propose a spin-selective coherent electron transfer in a silicon-quantum-dot array. Oscillating magnetic fields and temporally controlled gate voltages are utilised to separate the electron wave function into different quantum dots…
The fundamental building blocks of modern silicon-based microelectronics, such as double gate transistors in non-volatile Flash memories, are based on the control of electrical resistance by electrostatic charging. Flash memories could soon…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
Analog crossbar arrays consisting of emerging memory devices can greatly alleviate the computational strain required by vector matrix multiplications for neural network applications. The ability to produce spin orbit torque-magnetic…
The conventional von Neumann architecture has been revealed as a major performance and energy bottleneck for rising data-intensive applications. %, due to the intensive data movements. The decade-old idea of leveraging in-memory processing…
The development of future spintronic applications requires a thorough and fundamental understanding of the magnetisation dynamics. Of particular interest are magnetic nanodisks, in which the vortex state emerges as a stable spin…
Magnetic vortices are highly tunable, nonlinear systems with ideal properties for being applied in spin wave emission, data storage, and neuromorphic computing. However, their technological application is impaired by a limited understanding…
The magnetic vortex structure, an important ground state configuration in micron and sub-micron sized ferromagnetic thin film platelets, is characterized by a curling in-plane magnetization and, in the center, a minuscule region with…
Resistive Random Access Memories (RRAMs) are being studied by the industry and academia because it is widely accepted that they are promising candidates for the next generation of high density nonvolatile memories. Taking into account the…
Optical static random access memory (O-SRAM) is one of the key components required for achieving the goal of ultra-fast, general-purpose optical computing. We propose and design a novel O-SRAM using fabrication-friendly photonics device…