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Bilayer graphene (BLG) has recently attracted a great deal of attention because of its electrically tunable energy gaps and its unusual electronic structure. In this Letter we present analytical and semi-analytical expressions, based on the…
Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer…
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual…
Flatbands with extremely narrow bandwidths on the order of a few mili-electron volts can appear in twisted multilayer graphene systems for appropriate system parameters. Here we investigate the electronic structure of a twisted bi-bilayer…
We study ballistic transport in periodically gated bilayer graphene as a candidate for a 2D electronic metamaterial. Our calculations use the equilibrium Green function formalism and take into account quantum corrections to charge density…
Finding an effective and controllable way to create a sizable energy gap in graphene-based systems has been a challenging topic of intensive research. We propose that the hybrid of boron nitride and graphene (h-BNC) at low BN doping serves…
We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the $\Gamma$ point. The bilayer has two…
This article reviews the theoretical and experimental work related to the electronic properties of bilayer graphene systems. Three types of bilayer stackings are discussed: the AA, AB, and twisted bilayer graphene. This review covers…
We have investigated the Coulomb screening properties and plasmon spectrum in a bilayer graphene under a perpendicular electric bias. The bias voltage applied between the two graphene layers opens a gap in the single particle energy…
Near a magic twist angle, bilayer graphene transforms from a weakly correlated Fermi liquid to a strongly correlated two-dimensional electron system with properties that are extraordinarily sensitive to carrier density and to controllable…
A tight binding model is used to calculate the band structure of bilayer graphene in the presence of a potential difference between the layers that opens a gap $\Delta$ between the conduction and valence bands. In particular, a self…
We present measurements of the electronic compressibility, $K$, of bilayer graphene in both zero and finite magnetic fields up to 14 T, and as a function of both the carrier density and electric field perpendicular to the graphene sheet.…
We present electronic structure calculations of twisted double bilayer graphene (TDBG): A tetralayer graphene structure composed of two AB-stacked graphene bilayers with a relative rotation angle between them. Using first-principles…
We study the electronic transport properties of a dual-gated bilayer graphene nanodevice via first principles calculations. We investigate the electric current as a function of gate length and temperature. Under the action of an external…
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a…
We investigate band-gap tuning of bilayer graphene between hexagonal boron nitride sheets, by external electric fields. Using density functional theory, we show that the gap is continuously tunable from 0 to 0.2 eV, and is robust to…
A theory is presented for the strong enhancement of graphene-on-substrate bandgaps by attractive interactions mediated through phonons in a polarizable superstrate. It is demonstrated that gaps of up to 1eV can be formed for experimentally…
The resistivity of gated graphene is studied taking into account electron and hole scattering by short- and long-range structural imperfections the characteristics of disorder were taken from the scanning tunneling microscopy data and by…
Graphene is a promising candidate to succeed silicon based devices and doping holds the key to graphene electronics. Conventional doping methods through surface functionalization or lattice modification are effective in tuning carrier…
We demonstrate that for gapped bilayer graphene, the nonlinear nature of the screening of an external disorder potential and the resulting inhomogeneity of the electron liquid are crucial for describing the electronic compressibility. In…