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Finite-bandwidth effects on the temperature dependence of the mobility of injected carriers in pure organic crystals are explored for a simplifed case of impurity scattering. Temperature-dependent bandwidth effects are discussed briefly…

Soft Condensed Matter · Physics 2009-11-07 V. M. Kenkre

The impact of neutral impurity scattering of electrons on the charge drift mobility in high purity n-type germanium crystals at 77 Kelvin is investigated. We calculated the contributions from ionized impurity scattering, lattice scattering,…

Instrumentation and Detectors · Physics 2017-08-02 H. Mei , G. -J. Wang , G. Yang , D. -M. Mei

We reported a new result of the neutral impurity scattering of holes that has impact on the charge drift mobility in high purity p-type germanium crystals at 77 Kelvin. The charge carrier concentration, mobility and resistivity are measured…

Instrumentation and Detectors · Physics 2017-02-01 H. Mei , D. -M. Mei , G. -J. Wang , G. Yang

The mobility of charge carriers in a semiconductor nanowire is explored as a function of increasing radius, assuming low temperatures where impurity scattering dominates. The competition between increased cross-section and the concurrent…

Materials Science · Physics 2009-11-11 Kunal K. Das , Ari Mizel

The past decade has seen the emergence of ab initio computational methods for calculating phonon-limited carrier mobilities in semiconductors with predictive accuracy. More realistic calculations ought to take into account additional…

Materials Science · Physics 2023-04-12 Joshua Leveillee , Xiao Zhang , Emmanouil Kioupakis , Feliciano Giustino

As applied to the numerical simulation of electron transport and scattering processes in semiconductors an efficient model describing the scattering of electrons by the ionized impurities is proposed. On the example of GaAs at 77 and 300 K…

General Physics · Physics 2014-03-07 Dmitry Pozdnyakov

Diamond field-effect transistors (FETs) have potential applications in power electronics and high-output high-frequency amplifications. In such applications, high charge-carrier mobility is desirable for a reduced loss and high-speed…

We present a novel theory of charge-carrier mobilities in organic molecular crystals of high purity. Our approach is based on Holstein's original concept of small-polaron bands but generalized with respect to the inclusion of nonlocal…

Soft Condensed Matter · Physics 2007-05-23 K. Hannewald , P. A. Bobbert

The nonproportional response and related energy resolution of LaBr$_3$:Ce$^3+$ scintillation crystals doped with different concentrations of cerium were studied between 80K and 450K. For Ce$^3+$ concentration of 5% and 30%, LaBr$_3$ showed…

Materials Science · Physics 2012-09-25 I. V. Khodyuk , F. G. A. Quarati , M. S. Alekhin , P. Dorenbos

Detailed experimental and theoretical studies of the temperature dependence of the effect of different scattering mechanisms on electrical transport properties of graphene devices are presented. We find that for high mobility devices the…

Mesoscale and Nanoscale Physics · Physics 2016-02-23 Suman Sarkar , Kazi Rafsanjani Amin , Ranjan Modak , Amandeep Singh , Subroto Mukerjee , Aveek Bid

The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…

Instrumentation and Detectors · Physics 2011-08-16 Julian Becker , Eckhart Fretwurst , Robert Klanner

We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects. Our results show quantitative agreement with the existing…

Strongly Correlated Electrons · Physics 2009-10-31 S. Das Sarma , E. H. Hwang , Igor Zutic

Anisotropic charge carrier transport in black phosphorus limited by ionized impurity scattering at finite temperature is explored theoretically. The anisotropic electronic structure enters the calculation for the polarizability (screening),…

Mesoscale and Nanoscale Physics · Physics 2017-05-03 Yue Liu , P. Paul Ruden

The temperature dependence of experimental charge carrier mobility is commonly used as a predictor of the dominant carrier scattering mechanism in semiconductors, particularly in thermoelectric applications. In this work, we critically…

Materials Science · Physics 2022-10-05 Alex M. Ganose , Junsoo Park , Anubhav Jain

The scattering of electrons on impurities with internal degrees of freedom is bound to produce the signatures of the scatterer's own dynamics and results in nontrivial electronic transport properties. Previous studies of polaronic…

Strongly Correlated Electrons · Physics 2021-01-18 J. Krsnik , I. Batistić , A. Marunović , E. Tutiš , O. S. Barišić

The scattering of carriers by charged dislocations in semiconductors is studied within the framework of the linearized Boltzmann transport theory with an emphasis on examining consequences of the extreme anisotropy of the scattering…

Disordered Systems and Neural Networks · Physics 2013-01-09 Bhavtosh Bansal , Rituparna Ghosh , V. Venkataraman

We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…

Mesoscale and Nanoscale Physics · Physics 2022-09-26 Khachatur G. Nazaryan , Mikhail Feigel'man

Predicting charge transport in organic molecular crystals is notoriously challenging. Carrier mobility calculations in organic semiconductors are dominated by quantum chemistry methods based on charge hopping, which are laborious and only…

Materials Science · Physics 2018-03-21 Nien-En Lee , Jin-Jian Zhou , Luis A. Agapito , Marco Bernardi

The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of $1-20\times10^3$ cm$^2$/V sec. Comparing the experimental data with the theoretical transport…

Mesoscale and Nanoscale Physics · Physics 2008-01-02 Y. -W. Tan , Y. Zhang , K. Bolotin , Y. Zhao , S. Adam , E. H. Hwang , S. Das Sarma , H. L. Stormer , P. Kim

We derive the ratio of transport and single particle relaxation times in three and two - dimensional electron gases due to scattering from charged dislocations in semiconductors. The results are compared to the respective relaxation times…

Materials Science · Physics 2009-11-07 D. Jena , U. K. Mishra
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