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I consider the problem of the vortex contribution to quasiparticle transport in unconventional superconductors with line nodes, a nd argue that the magnetic field dependence of transport coefficients is fixed by the same scattering…
The origin of the electronic nematicity and its remarkable material-dependence are famous longstanding unsolved issues in Fe-based superconductors. To attack these issues, we focus on the in-plane anisotropy of the resistivity: In the…
We consider the role of potential scatterers in the nematic phase of Fe-based superconductors above the transition temperature to the (pi,0) magnetic state but below the orthorhombic structural transition. The anisotropic spin fluctuations…
There are multiple possible origins of transport anisotropies in metals and superconductors. For instance, rotational symmetry can be spontaneously broken in the normal state as a result of electronic nematic order inducing anisotropies in…
We construct a theory of charge transport by the surface states of topological insulators in three dimensions. The focus is on the experimentally relevant case when the electron doping is such that the Fermi energy $\epsilon_F$ and…
We show that the semi-classical model of conduction breaks down if the mean free path of charge carriers is smaller than a typical extension of their wavefunction. This situation is realized for sufficiently slow charge carriers and leads…
Flat-band (FB) materials have emerged as promising platforms for exploring exotic quantum phases. While numerous candidates have recently been identified through spectroscopic techniques such as angle-resolved photoemission spectroscopy,…
Ballistic transport was studied in a multiple-band system consisting of an antidot lattice of AB-stacked trilayer graphene. The low temperature magnetoresistance showed commensurability peaks arising from matching of the antidot lattice…
Anisotropic transport properties have been assessed in a number of cuprate superconductors, providing evidence for a nematic state. Here, we analyze recent experimental data for ultrathin YBa$_2$Cu$_3$O$_{7-x}$ (YBCO) films, where…
Carrier transport in gated 2D graphene monolayers is theoretically considered in the presence of scattering by random charged impurity centers with density $n_i$. Excellent quantitative agreement is obtained (for carrier density $n >…
In recent years, further improvements in the efficiency of Cu$_2$ZnSn(S,Se)$_4$ photovoltaic devices have been hampered due to several materials issues, including cation disorder. Cu$_2$SnS$_3$ is a promising new absorber material that has…
We investigate the transport properties of three terminal carbon based nanojunctions within the scattering matrix approach. The stability of such junctions is subordinated to the presence of nonhexagonal arrangements in the molecular…
In view of its local character, the semiclassical or Boltzmann theory is intrinsically unable to describe transport phenomena on ultrashort space and time scales, and to this purpose genuine quantum-transport approaches are imperative. By…
Black phosphorus (BP) has recently emerged as a promising narrow band gap layered semiconductor with optoelectronic properties that bridge the gap between semi-metallic graphene and wide band gap transition metal dichalcogenides such as…
To date, the generic polarization of Bernardini, Fiorentini and Vanderbilt (PBFV) has been widely used to address the issue of polarity in III-V nitride semiconductors, but improvements in nitride materials and the performance of…
We present a study of spin transport in charge and spin inhomogeneous semiconductor systems. In particular, we investigate the propagation of spin-polarized electrons through a boundary between two semiconductor regions with different…
The scaling of Si transistor technology has resulted in a remarkable improvement in the performance of integrated circuits over the last decades. However, scaled transistors also require reduced electrical interconnect dimensions, which…
Interstitial defects are inevitably present in doped semiconductors that enable modern-day electronic, optoelectronic or thermoelectric technologies. Understanding of stability of interstitials and their bonding mechanisms in the silicon…
Numerical calculations of anisotropic hopping transport based on the resistor network model are presented. Conductivity is shown to follow the stretched exponential dependence on temperature with exponents changing from 1/4 to 1 as the wave…
Charge is transported through superconducting SSS single-electron transistors at finite bias voltages by a combination of coherent Cooper-pair tunneling and quasiparticle tunneling. At low transport voltages the effect of an ``odd''…