Related papers: Effect of electron correlations on (001) Fe/MgO in…
Effects of the electron-electron interaction on tunneling into a metal in ultra-high magnetic field (ultra-quantum limit) are studied. The range of the interaction is found to have a decisive effect both on the nature of the field-induced…
The conductance curves of point-contact tunnel junctions between Ag and $\rm Ba_{1-x}K_xBiO_3$ ($x\simeq 0.4$) reveal a BCS behavior with low leakage current at zero voltage and some broadening of the superconducting-gap structure. In the…
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n+-GaAs/n-GaAs…
We report on the magnetic switching and backhopping effects due to spin-transfer-torque in magnetic tunnel junctions. Experimental data on the current-induced switching in junctions with MgO tunnel barrier reveal a random back-and-forth…
Thermal spin-transfer torque describes the manipulation of the magnetization by the application of a heat flow. The effect has been calculated theoretically by Jia et al. in 2011. It is found to require large temperature gradients in the…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
We demonstrate efficient spin-polarized tunneling between a ferromagnetic metal and a ferromagnetic semiconductor with highly mismatched conductivities. This is indicated by a large tunneling magnetoresistance (up to 30%) at low…
We first report the all-electrical spin injection and detection in CoFe/MgO/moderately doped n-Ge contact at room temperature (RT), employing threeterminal Hanle measurements. A sizable spin signal of ~170 k{\Omega} {\mu}m^2 has been…
Stable organic radicals integrated into molecular junctions represent a practical realization of the single-orbital Anderson impurity model. Motivated by recent experiments for perchlorotriphenylmethyl (PTM) molecules contacted to gold…
We study spin-dependent transport properties in magnetic tunneling junctions (MTJs) with semiconductor barriers, Fe/CuInSe$_2$/Fe(001) and Fe/CuGaSe$_2$/Fe(001). By analyzing their transmittances at zero bias voltage on the basis of the…
Recently, superconductivity was discovered at very low densities in slightly misaligned graphene multilayers. Surprisingly, despite extremely low electronic density (about $10^{-4}$ electrons per unit cell), these systems realize…
We propose a phenomenological description of electronic transport through a normal metal/superconductor interface of arbitrary transparency, which accounts for the presence of electron-electron interaction in the normal metal. The effect of…
We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate…
Magnetic tunnel junctions with wide band gap semiconductor ZnTe barrier were fabricated. A very low barrier height and sizable magnetoresistance were observed in the Fe/ZnTe/Fe junctions at room temperature. The nonlinear I-V characteristic…
The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully…
Motivated by observation of very high tunnel magnetoresistance (TMR) in Fe-MgO-Fe magnetic tunnel junction devices, we propose a theoretical model for these devices based on a single-band tight-binding approximation. An effort is made to…
Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent…
Half-metallic Co-based full Heusler alloys have captured considerable attention of the researchers in the realm of spintronic applications, owing to their remarkable characteristics such as exceptionally high spin polarization at Fermi…
We observe that in a strongly interacting two-dimensional electron system in ultra-clean SiGe/Si/SiGe quantum wells, the resistivity on the metallic side near the metal-insulator transition increases with decreasing temperature, reaches a…
The effects of local electronic interactions and finite temperatures upon the transmission across the Cu$_4$CoCu$_4$ metallic heterostructure are studied in a combined density functional and dynamical mean field theory. It is shown that, as…