Related papers: Scanning-gate microscopy of semiconductor nanostru…
Superconductor--semiconductor hybrid systems play a crucial role in realizing nanoscale quantum devices, including hybrid qubits, Majorana bound states, and Kitaev chains. For such hybrid devices, subgap states play a prominent role in…
The interplay of tunneling transport and carrier-mediated ferromagnetism in narrow semiconductor multi-quantum well structures containing layers of GaMnAs is investigated within a self-consistent Green's function approach, accounting for…
The purpose of this work is to fabricate ribbon-like InGaAs and InAsP wires embedded in InP ridge structures and investigate their transport properties. The InP ridge structures that contain the wires are selectively grown by chemical beam…
We present a theoretical model of split-gate quantum wires that are fabricated from GaAs-AlGaAs heterostructures. The model is built on the physical properties of donors and of semiconductor surfaces, and considerations of equilibrium in…
We show that transport in low-dimensional carbon structures with finite concentrations of scatterers can be modeled by utilising scaling theory and effective cross sections. Our reults are based on large scale numerical simulations of…
We present an electron interferometer defined purely by electrostatic gating in encapsulated bilayer graphene. This minimizes possible sample degradation introduced by conventional etching methods when preparing quantum devices. The device…
Combining the capabilities of gate defined quantum transport devices in GaAs-based heterostructures and of optically addressed self-assembled quantum dots could open broad perspectives for new devices and functionalities. For example,…
We study spin-dependent interband resonant tunneling in double-barrier InAs/AlSb/ GaMnSb heterostructures. We demonstrate that these structures can be used as spin filters utilizing spin-selective tunneling of electrons through the…
We image the micro-electroluminescence (EL) spectra of self-assembled InAs quantum dots (QDs) embedded in the intrinsic region of a GaAs p-i-n diode and demonstrate optical detection of resonant carrier injection into a single QD. Resonant…
Considering the growing interest in magnetic materials for unconventional computing, data storage, and sensor applications, there is active research not only on material synthesis but also characterisation of their properties. In addition…
Progress in spintronics has been aided by characterization tools tailored to certain archetypical materials. New device structures and materials will require characterization tools that are material independent, provide sufficient…
When the electric conductance of a nano-sized metal is measured at low temperatures, it often exhibits complex but reproducible patterns as a function of external magnetic fields, called quantum fingerprints in electric conductance. Such…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to…
In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of…
A gated probe for scanning tunnelling microscopy (STM) has been developed. The probe extends normal STM operations by means of an additional electrode fabricated next to the tunnelling tip. The extra electrode does not make contact with the…
We consider an implementation of quantum gates for quantum computation using magnetostatic/magnetoelectric (MS/ME) macroscopically quantized states in small ferrite disks. Confinement phenomena for MS oscillations in a normally magnetized…
We investigate, assess, and suggest possibilities for a measurement of the local spin susceptibility of a conducting low-dimensional electron system. The basic setup of the experiment we envisage is a source-probe one. Locally induced spin…
Electroluminescence spectra of a silicon nanostructure with edge channels covered by chains of dipole centers with negative correlation energy are demonstrated. The presence of such chains provides conditions for nondissipative transport of…
For analyzing quantum transport in semiconductor devices, accurate electronic structures are critical for quantitative predictions. Here we report theoretical analysis of electronic structures of all III-V zinc-blende semiconductor…