Related papers: DEPFET Active Pixel Sensors for the Belle II Exper…

Monolithic Active Pixel Sensors (MAPS) have been developed since the late 1990s employing silicon substrate with a thin epitaxial layer in which deposited charge is collected by disordered diffusion rather than by drift in an electric…

The use of highly sensitive pixelated direct detectors has dramatically improved the performance of high energy instrumentation such as transmission electron microscopy. Here, we describe a recently developed monolithic active pixel sensor…

Monolithic Active Pixel Sensors (MAPS) combine the sensing part and the front-end electronics in the same silicon layer, making use of CMOS technology. Profiting from the progresses of this commercial process, MAPS have been undergoing…

$\beta$-Ga$_{2}$O$_{3}$ nanomembranes, obtained by ion-beam-assisted exfoliation, are used in the fabrication of simple metal-semiconductor-metal (MSM) structures, that are tested as photodetectors (PD) and field-effect transistors (FET).…

Belle II is a major upgrade of the Belle experiment and operates at the $B$-factory SuperKEKB in Japan. Since the SuperKEKB collider has a design luminosity of 8$\;\times\;$10$^{35}$ cm$^{-2}$s$^{-1}$, about 40 times larger than that of…

The Belle detector at the KEKB electron-positron collider has collected approximately 800 million Upsilon(4S) events in its decade of operation. The KEKB group has proposed Super-KEKB, an upgrade of KEKB to increase the luminosity by two…

Future space-based X-ray telescope missions are likely to have significantly increased demands on detector read out rates due to increased collection area, and there will be a desire to minimize radiation damage in the interests of…

During LHC Long Shutdown 3, the ALICE experiment will replace the three innermost layers of its Inner Tracking System (ITS2) with a new vertex detector, the ITS3. This new detector will be assembled using wafer-scale, stitched Monolithic…

We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m…

Monolithic active pixel sensors produced in High Voltage CMOS (HV-CMOS) technology are being considered for High Energy Physics applications due to the ease of production and the reduced costs. Such technology is especially appealing when…

The OCTOPUS project addresses the development and characterization of monolithic active pixel sensors in the TPSCo 65 nm ISC technology in view of vertexing applications at a future lepton collider. Meeting the corresponding requirements --…

The two innermost layers of the ALICE inner tracking system are instrumented with silicon pixel detectors. Single chip assembly prototypes of the ALICE pixels have been tested in high energy particle beams at the CERN SPS. Detection…

The Belle-II experiment and superKEKB accelerator will form a next generation B-factory at KEK, capable of running at an instantaneous luminosity 40 times higher than the Belle detector and KEKB. This will allow for the elucidation of many…

The demands on detectors for particle detection as well as for medical and astronomical X-ray imaging are continuously pushing the development of novel pixel detectors. The state of the art in pixel detector technology to date are hybrid…

The High Luminosity upgrade of the CERN Large Hadron Collider (HL-LHC) requires new high-radiation tolerant silicon pixel sensors for the innermost part of the tracking detector in the CMS experiment. The innermost layer of the tracker,…

The LUXE experiment aims at studying high-field QED in electron-laser and photon-laser interactions, with the 16.5 GeV electron beam of the European XFEL and a laser beam with power of up to 350 TW. The experiment will measure the spectra…

Conventional silicon photomultipliers (SiPMs) are well established as light detectors with single-photon-detection capability and used throughout high energy physics, medical, and commercial applications. The possibility to produce single…

Monolithic pixel detectors combine readout electronics and sensor in a single entity of silicon, which simplifies the production procedure and lowers the material budget compared to conventional hybrid pixel detector concepts. Benefiting…

Pixel sensors using 8" CMOS processing technology have been designed and characterized offering the benefits of industrial sensor fabrication, including large wafers, high throughput and yield, as well as low cost. The pixel sensors are…

We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an…