Related papers: Enhanced Conductance Fluctuation by Quantum Confin…
Graphene nanoribbons display an imperfectly understood transport gap. We measure transport through nanoribbon devices of several lengths. In nanoribbons of length greater than or equal to 250 nm we observe transport through multiple quantum…
A distinctive feature of single layer graphene is the linearly dispersive energy bands, which in case of multilayer graphene become parabolic. Other than the quantum Hall effect, this distinction has been hard to capture in electron…
We study the effect of the edge disorder on the conductance of the graphene nanoribbons (GNRs). We find that only very modest edge disorder is sufficient to induce the conduction energy gap in the otherwise metallic GNRs and to lift any…
The electronic properties of low-dimensional materials can be engineered by doping, but in the case of graphene nanoribbons (GNR) the proximity of two symmetry-breaking edges introduces an additional dependence on the location of an…
Charge noise is critical in the performance of gate-controlled quantum dots (QDs). Here we show the 1/f noise for a microscopic graphene QD is substantially larger than that for a macroscopic graphene field-effect transistor (FET),…
We study the effects of uniaxial strains on the transport properties of the graphene nanoribbons(GNRs) connected with two metallic leads in heterojunctions, using the transfer matrix method. Two typical GNRs with zigzag and armchair…
The magnetoconductance of graphene nanoribbons with rough zigzag and armchair edges is studied by numerical simulations. nanoribbons with sufficiently small bulk disorder show a pronounced magnetoconductance minimum at cyclotron radii close…
Quantum confinement and interference often generate exotic properties in nanostructures. One recent highlight is the experimental indication of a magnetic phase transition in zigzag-edged graphene nanoribbons at the critical ribbon width of…
The effects of edge irregularity and mixed edge shapes on the characteristics of graphene nanoribbon transistors are examined by self-consistent atomistic simulations based on the non-equilibrium Green's function formalism. The minimal…
We report measurements of magnetoresistance in single-layer graphene as a function of gate voltage (carrier density) at 250 mK. By examining signatures of weak localization (WL) and universal conductance fluctuations (UCF), we find a…
We study the conductance through two types of graphene nanostructures: nanoribbon junctions in which the width changes from wide to narrow, and curved nanoribbons. In the wide-narrow structures, substantial reflection occurs from the…
We report, based on its variation in electronic transport to coupled tension and shear deformation, a highly sensitive graphene-based strain sensor consisting of an armchair graphene nanoribbon (AGNR) between metallic contacts. As the…
Using high quality graphene pnp junctions, we observe prominent conductance fluctuations on transitions between quantum Hall (QH) plateaus as the top gate voltage Vtg is varied. In the Vtg-B plane, the fluctuations form crisscrossing lines…
The evolution of electronic structure of graphene nanoribbons (GNRs) as a function of the number of layers stacked together is investigated using \textit{ab initio} density functional theory (DFT) including interlayer van der Waals…
Voltage is a sensitive quantity to quantum interference in coherent electronic transport. We study the voltage fluctuations in disordered graphene nanoribbons with zigzag and armchair edge terminations in a four-terminal configuration. We…
The electronic properties of a material depend on the spatial freedom of the electron wavefunction. A well-known example is graphite, which is a conventional gapless semiconductor, while a single layer of it, graphene, exhibits extremely…
We have experimentally investigated quantum interference corrections to the conductivity of graphene nanoribbons at temperatures down to 20 mK studying both weak localization (WL) and universal conductance fluctuations (UCF). Since in…
We theoretically analyse the possibility to electrostatically confine electrons in circular quantum dot arrays, impressed on contacted graphene nanoribbons by top gates. Utilising exact numerical techniques, we compute the scattering…
We investigate the universal properties of quantum transport in graphene nanowires that engender subtle universal conductance fluctuations. We present results for three of the main microscopic models that describe the sublattice of graphene…
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition (CVD) process to form the graphene. The GNR FETs show…