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The effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots grown on GaAs is investigated with an atomistic valence-force-field model and an empirical tight-binding model. By comparing a dot with…

Materials Science · Physics 2009-11-10 Seungwon Lee , Olga L. Lazarenkova , Fabiano Oyafuso , Paul von Allmen , Gerhard Klimeck

A density functional theory study of the structural and electronic properties and relative stability of narrow SP3 silicon nanotubes of different growth orientations is presented. All nanotubes studied and their corresponding wire…

Mesoscale and Nanoscale Physics · Physics 2012-12-05 Alon Hever , Jonathan Bernstein , Oded Hod

The importance of finite-size effects for the electronic structure of long zigzag and armchair carbon nanotubes is studied. We analyze the electronic structure of capped (6,6), (8,0), and (9,0) single walled carbon nanotubes as a function…

Chemical Physics · Physics 2007-05-23 Oded Hod , Juan E. Peralta , Gustavo E. Scuseria

We report the spectral imaging in the UV to visible range with nanometer scale resolution of closely packed GaN/AlN quantum disks in individual nanowires using an improved custom-made cathodoluminescence system. We demonstrate the…

We present a theoretical analysis of the role that strain plays on the electronic structure of chromium nitride crystals. We use LSDA+U calculations to study the elastic constants, deforma- tion potentials and strain dependence of electron…

Materials Science · Physics 2017-09-20 Tomas Rojas , Sergio E. Ulloa

We present a systematic analysis of the effect of radial deformation on the atomic and electronic structure of zigzag and armchair single wall carbon nanotubes using the first principle plane wave method. The nanotubes were deformed by…

Materials Science · Physics 2016-08-31 O. Gulseren , T. Yildirim , S. Ciraci , C. Kilic

Using first-principles computations, we study the effect of epitaxial strains on electronic structure variations across ZnSe/ZnTe nano-heterostructures. Epitaxial strains of various types are modeled using pseudomorphic ZnSe/ZnTe…

Materials Science · Physics 2015-07-14 Satyesh Kumar Yadav , Vinit Sharma , Rampi Ramprasad

By combining an atomistic valence-force field approach and calculations based on the effective-mass approximation we investigate the influence of strain effects on the band alignment and general excitonic properties of core/shell CdSe/CdS…

Mesoscale and Nanoscale Physics · Physics 2019-02-25 Sven-Hendrik Lohmann , Philip Harder , Felix Bourier , Christian Strelow , Alf Mews , Tobias Kipp

Semiconducting single-walled carbon nanotubes are studied in the diffusive transport regime. The peak mobility is found to scale with the square of the nanotube diameter and inversely with temperature. The maximum conductance, corrected for…

Mesoscale and Nanoscale Physics · Physics 2009-11-11 Xinjian Zhou , Ji-Yong Park , Shaoming Huang , Jie Liu , Paul L. McEuen

This work focuses on understanding the nonlinear-optical response of a 1-D quantum wire embedded in 2-D space when quantum-size effects in the transverse direction are minimized using an extremely weighted delta function potential. Our aim…

Optics · Physics 2012-03-30 Shoresh Shafei , Mark G. Kuzyk

Atomically precise graphene nanoribbons (GNRs) have emerged as promising candidates for nanoelectronic applications due to their widely tunable energy band gaps resulting from lateral quantum confinement and edge effects. Here we report on…

Using {\it ab initio} total energy density-functional theory calculations, we investigate the electronic, structural and magnetic properties of Manganese doped Germanium nanowires. The nanowires have been constructed along the [110]…

Materials Science · Physics 2016-08-16 J. T. Arantes , Antônio J. R. da Silva , A. Fazzio

At vertical edges, thin films of silicon oxide (SiO_{2-x}) contain semiconductive c-Si layered nanocrystals (Si NC) embedded in and supported by an insulating g-SiO2 matrix. Tour et al. have shown that a trenched thin film geometry enables…

Materials Science · Physics 2015-05-20 J. C. Phillips

Phonon properties of small Si nanowires in [110] direction have been analyzed using density functional perturbation theory. Several samples with varying diameters ranging from 0.38 to 1.5 nm have been calculated. It is found that the…

Materials Science · Physics 2022-07-06 Konstanze R. Hahn , Claudio Melis , Fabio Bernardini , Lorenzo Paulatto , Luciano Colombo

Strain fold-like deformations on armchair graphene nanoribbons (AGNRs) can be properly engineered in experimental setups, and could lead to a new controlling tool for gaps and transport properties. Here, we analyze the electronic properties…

Mesoscale and Nanoscale Physics · Physics 2017-03-08 V. Torres , C. Leon , D. Faria , A. Latge

The thermoelectric properties of two typical SiGe nanotubes are investigated using a combination of density functional theory, Boltzmann transport theory, and molecular dynamics simulations. Unlike carbon nanotubes, these SiGe nanotubes…

Materials Science · Physics 2015-02-24 J. Wei , H. J. Liu , X. J. Tan , L. Cheng , J. Zhang , D. D. Fan , J. Shi , X. F. Tang

The atomic and electronic structure of a set of proposed thin (1.6 nm in diameter) silicon/silica quantum nanodots and nanowires with narrow interface, as well as parent metastable silicon structures (1.2 nm in diameter), was studied in…

Quantum shape effect appears under the size-invariant shape transformations of strongly confined structures. Such a transformation distinctively influences the thermodynamic properties of confined particles. Due to their characteristic…

Mesoscale and Nanoscale Physics · Physics 2022-11-08 Alhun Aydin , Jonas Fransson , Altug Sisman

Based on first-principles calculations we showed that superlattices of periodically repeated junctions of hydrogen saturated silicon nanowire segments having different lengths and diameters form multiple quantum well structures. The band…

Mesoscale and Nanoscale Physics · Physics 2010-12-22 Seymur Cahangirov , Salim Ciraci

Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of…

Mesoscale and Nanoscale Physics · Physics 2009-12-23 Marc Scheffler , Stevan Nadj-Perge , Leo P. Kouwenhoven , Magnus T. Borgström , Erik P. A. M. Bakkers