Related papers: An integrated capacitance bridge for high-resoluti…
The effective frequency of a mechanical resonator can be tuned via the spring effect induced by quadratic optomechanical (QOM) coupling, and both spontaneous symmetry breaking and anti-parity-time phase transition were predicted in the QOM…
High precision interferometers are the building blocks of precision metrology and the ultimate interferometric sensitivity is limited by the quantum noise. Here we propose and experimentally demonstrate a compact quantum interferometer…
beta-Ga2O3 is a wide bandgap semiconductor with electrical properties better than SiC and GaN which makes it promising for applications of next-generation power devices. However, the thermal conductivity of \b{eta}-Ga2O3 is more than one…
The mass production and the practical number of cryogenic quantum devices producible in a single chip are limited to the number of electrical contact pads and wiring of the cryostat or dilution refrigerator. It is, therefore, beneficial to…
An important route of engineering topological states and excitations is to combine superconductors (SC) with the quantum Hall (QH) effect, and over the past decade, significant progress has been made in this direction. While typical…
Quantum anomalous Hall effect (QAHE) was discovered a decade ago, but is still not utilized beyond a handful of research groups, due to numerous limitations such as extremely low temperature, electric field-effect gating requirement, small…
Superconducting qubits are a leading platform for scalable quantum computing and quantum error correction. One feature of this platform is the ability to perform projective measurements orders of magnitude more quickly than qubit…
The integrated optical circuit is a promising architecture for the realization of complex quantum optical states and information networks. One element that is required for many of these applications is a high-efficiency photon detector…
We report high-resolution specific heat measurements on the quasi-2D organic superconductor $\kappa$-(BEDT-TTF)$_2$Cu(NCS)$_2$, performed by using a most sensitive ac-modulation technique. The main observations are (i) a discontinuity at…
Recent reported very high thermal conductivities in the cubic boron arsenide (BAs) and boron phosphide (BP) crystals could potentially provide a revolutionary solution in the thermal management of high power density devices. To fully…
Advances in power electronics have made it possible to achieve high power levels, e.g., reaching GW in grids, or alternatively high output bandwidths, e.g., beyond MHz in communication. Achieving both simultaneously, however, remains…
In recent years there has been considerable interest in developing photonic temperature sensors such as the Fiber Bragg gratings (FBG) as an alternative to resistance thermometry. In this study we examine the thermal response of FBGs over…
Current state-of-the-art superconducting microwave qubits are cooled to extremely low temperatures to avoid sources of decoherence. Higher qubit operating temperatures would significantly increase the cooling power available, which is…
High linear voltage references circuitry are designed and implemented in TSMC 0.18$\mu$m CMOS technology. Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in…
We describe a device to conveniently measure the positions of the phase boundaries in a dilution refrigerator. We show how a simple modification of a standard capacitive level gauge (segmentation of one of the electrodes) permits a direct…
Here we investigate the use of single-junction InGaAs airbridge cells (ABCs) at elevated power densities. Such conditions are relevant to many thermophotovoltaic (TPV) applications, ranging from space to on-demand renewable electricity, and…
We present an exhaustive theoretical analysis of charge and thermoelectric transport in a normal metal-ferromagnetic insulator-superconductor (NFIS) junction, and explore the possibility of its use as a sensitive thermometer. We…
Overheating has emerged as a primary challenge constraining the reliability and performance of next-generation high-performance electronics, such as chiplets and (ultra)wide bandgap electronics. Advanced heterogeneous integration not only…
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor (HEMT) with a short gate length (Lg $\approx$ 0.15$\mu$m). We have studied the effect of short gate length on the small signal parameters, linearity…
We realize a superconducting nanodevice in which vortex traps in the form of an aluminum square are integrated with a Dayem nanobridge. We perform field-cooling of the traps arriving to different vortex configurations, dependent on the…