Related papers: An integrated capacitance bridge for high-resoluti…
This study establishes a unified framework for interpreting dynamic capacitive responses in InGaN-based light-emitting diodes (LEDs) through forward-bias capacitance-voltage-frequency spectroscopy. A hybrid impedance model integrating…
Quantum probes, such as single- and two-qubit probes, can accurately measure the temperature of a bosonic bath. The current investigation assesses the precision of temperature estimate using quantum Fisher information and the accompanying…
Manipulating the electromagnetic spectrum at the single-photon level is fundamental for quantum experiments. In the visible and infrared range, this can be accomplished with atomic quantum emitters, and with superconducting qubits such…
We report on efforts to improve the speed of low-G far-infrared transition-edged-sensed bolometers. We use a fabrication process that does not require any dry etch steps to reduce heat capacity on the suspended device and measure a…
We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature…
By coupling a quantum detector, a superconductor-insulator-superconductor junction, to a Josephson junction \textit{via} a resonant circuit we probe the high frequency properties, namely the ac complex admittance and the current…
The unique capabilities of capacitance measurements in bilayer graphene enable probing of layer-specific properties that are normally out of reach in transport measurements. Furthermore, capacitance measurements in the top-gate and…
For the baseline APT (Accelerator Production of Tritium) linac design, power couplers are required to transmit 210-kW of CW RF power to the superconducting cavities. These APT couplers operate at 700 MHz, have a coaxial design and an…
Graphene is promising for nanoscale, efficient, ultra-fast photo- and opto-electronic devices because of its remarkable electrical and optical properties, such as fast electron relaxation and heat dissipation. Here, we realize…
Recent measurements of an unusual high thermal conductivity of around 1000 W m-1 K-1 at room temperature in cubic boron arsenide (BAs) confirm predictions from theory and suggest potential applications of this semiconductor compound for…
A single width NIM module that includes eight channels TAC (time-to-amplitude converter) and QAC (charge-to-amplitude converter) is introduced in the paper, which is designed for the large neutron wall detector to measure charge (energy)…
We propose and demonstrate wide-band capacitance measurements on a semiconductor double-quantum dot (DQD) to study tunneling dynamics. By applying phase-tunable high-frequency signals independently to the DQD and a nearby…
The influence of the growth conditions as well as the device design on the device performance of (GaIn)As/Ga(AsSb)/(GaIn)As "W"-quantum well lasers is investigated. To this purpose, the epitaxy process is scaled to full two inch substrates…
Navigating the intricacies of thermal management at the quantum scale is a challenge in the pursuit of advanced nanoscale technologies. To this extent, theoretical frameworks introducing minimal models mirroring the functionality of…
The wide bandgap, high-breakdown electric field, and high carrier mobility makes GaN an ideal material for high-power and high-frequency electronics applications such as wireless communication and radar systems. However, the performance and…
The unique optoelectronic properties of graphene [1] make it an ideal platform for a variety of photonic applications [2], including fast photodetectors [3], transparent electrodes [4], optical modulators [5], and ultra-fast lasers [6].…
As we rapidly advance through the information age, the power consumed by computers, data centers, and networks grows exponentially. This has inspired a race to develop alternative low-power computational technologies. A new adiabatic…
An analysis of recent experimental data for high-performance In0.7Ga0.3As high electron mobility transistors (HEMTs) is presented. Using a fully quantum mechanical, ballistic model, we simulate In0.7Ga0.3As HEMTs with gate lengths of LG =…
We demonstrate radiofrequency thermometry on a micrometer-sized metallic island below 100 mK. Our device is based on a normal metal-insulator-superconductor tunnel junction coupled to a resonator with transmission readout. In the first…
A new traceability chain for the derivation of the farad from dc quantum Hall effect has been implemented at INRIM. Main components of the chain are two new coaxial transformer bridges: a resistance ratio bridge, and a quadrature bridge,…